Graphene nanosheet/silicone composite with enhanced thermal conductivity and its application in heat dissipation of high-power light-emitting diodes

2016 ◽  
Vol 16 (12) ◽  
pp. 1695-1702 ◽  
Author(s):  
Haiyan Zhang ◽  
Yingxi Lin ◽  
Danfeng Zhang ◽  
Wenguang Wang ◽  
Yuxiong Xing ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Power ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Graphene Nanosheet ◽  
Light Emitting ◽  
Enhanced Thermal Conductivity

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

scholarly journals Substrate thermal conductivity effect on heat dissipation and lifetime improvement of organic light-emitting diodes

2009 ◽  
Vol 94 (25) ◽  
pp. 253302 ◽  
Author(s):  
Seungjun Chung ◽  
Jae-Hyun Lee ◽  
Jaewook Jeong ◽  
Jang-Joo Kim ◽  
Yongtaek Hong
Keyword(s):  
Thermal Conductivity ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light

Effective Heat Dissipation from Color-Converting Plates in High-Power White Light Emitting Diodes by Transparent Graphene Wrapping

ACS Nano ◽  
2015 ◽  
Vol 10 (1) ◽  
pp. 238-245 ◽  
Author(s):  
Eden Kim ◽  
Hyeon Woo Shim ◽  
Sanjith Unithrattil ◽  
Yoon Hwa Kim ◽  
Hojin Choi ◽  
...  
Keyword(s):  
White Light ◽  
High Power ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Effective Heat ◽  
White Light Emitting Diodes

Comparative Analysis Between Water-Cooled and Air-Cooled Heat Dissipation in a High-Power Light-Emitting Diode Chipset

2019 ◽  
Vol 11 (6) ◽  
Author(s):  
Yuanlong Chen ◽  
Tingbo Hou ◽  
Minqiang Pan
Keyword(s):  
Thermal Conductivity ◽  
Flow Rate ◽  
High Power ◽  
Heat Dissipation ◽  
Volumetric Flow Rate ◽  
Critical Value ◽  
Input Power ◽  
Substrate Thickness ◽  
Light Emitting ◽  
High Power Led

With a substantial increase in thermal power density, the operating temperature of high-power light-emitting diodes (LEDs) rises rapidly, exerting a notable effect on chipsets’ performance. A water-cooled microchannel radiator and an air-cooled radiator are proposed to solve this problem. The effects of key factors of both radiators on heat dissipation in a high-power LED chipsets, and general comparisons between each method, are analyzed via Fluent. The simulation results indicate that heat dissipation from the water-cooled microchannel radiator is readily affected by the microchannel’s flow rate and aspect ratio. A larger flow rate and larger aspect ratio favor improved heat dissipation in the water-cooled microchannel radiator. Heat dissipation in the air-cooled radiator is related to volumetric flow rate, rib number, rib height, rib thickness, and substrate thickness. A larger volumetric flow rate, rib number, and rib height favor heat dissipation in the air-cooled radiator. However, there is a critical thickness value: if the thickness is less than the critical value, heat dissipation is greatly affected by rib thickness and substrate thickness, if the thickness is larger than the critical value, the influence is insignificant. The high-power LED chipsets’ temperature is also related to the insulating substrate’ input power and thermal conductivity. A large input power leads to a substantial increase in temperature, and larger thermal conductivity of the insulating substrate minimizes temperature increase in the high-power LED chipsets. When comparing the two radiators, results show an air-cooled radiator should be used in low-power LED chipsets. When an air-cooled radiator cannot satisfy the chipset’s needs, a water-cooled microchannel radiator should be utilized.

Enhanced Heat Dissipation of High-Power Light-Emitting Diodes by Cu Nanoparticle Paste

2019 ◽  
Vol 40 (6) ◽  
pp. 949-952 ◽  
Author(s):  
Yun Mou ◽  
Hao Wang ◽  
Yang Peng ◽  
Hao Cheng ◽  
Qinglei Sun ◽  
...  
Keyword(s):  
High Power ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Cu Nanoparticle

Glass-ceramic composites for high-power white-light-emitting diodes

2021 ◽  
Author(s):  
Alessandro Longato ◽  
Sebastiano Picco ◽  
Lorenzo Moro ◽  
Matteo Buffolo ◽  
Carlo De Santi ◽  
...  
Keyword(s):  
White Light ◽  
High Power ◽  
Glass Ceramic ◽  
Light Emitting Diodes ◽  
Ceramic Composites ◽  
Light Emitting ◽  
White Light Emitting Diodes
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