The effects of high purity MgO nano-powders on the electrical properties of AC-PDPs

2010 ◽  
Vol 10 (6) ◽  
pp. 1378-1382 ◽  
Author(s):  
Jong-Seo Choi ◽  
Sung-Hwan Moon ◽  
Jae-Hyuk Kim ◽  
Gil-Ho Kim
Keyword(s):  
Electrical Properties ◽  
High Purity

Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

1991 ◽  
Vol 110 (4) ◽  
pp. 910-914 ◽  
Author(s):  
K. Rakennus ◽  
K. Tappura ◽  
T. Hakkarainen ◽  
H. Asonen ◽  
R. Laiho ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam ◽  
Gas Source ◽  
Interface Effects

Chemical process to normalize the electrical properties of a-Se

1986 ◽  
Vol 1 (1) ◽  
pp. 10-11 ◽  
Author(s):  
S. S. Badesha ◽  
M. A. Abkowitz ◽  
F. E. Knier
Keyword(s):  
Electrical Properties ◽  
High Purity ◽  
Chemical Process ◽  
Vacuum Evaporation ◽  
Amorphous Selenium ◽  
Electrical Characteristics ◽  
Prior Work ◽  
Amorphous Films ◽  
Specific Chemical ◽  
Chemical Procedure

The influence of specific chemical dopants on the electrophotographic behavior of selenium and its alloys has been established in prior work. This communication describes a chemical procedure that has been found effective in removing electronically active impurities from amorphous selenium. The methodology involves converting contaminated selenium into a chemical intermediate that is separated by selective alcoholic dissolution and then reduced to high-purity selenium. The electrical characteristics of the amorphous films obtained by vacuum evaporation of the latter are determined directly from analysis of xerographic potentials.

Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method

2019 ◽  
Vol 963 ◽  
pp. 30-33
Author(s):  
Chae Young Lee ◽  
Jeong Min Choi ◽  
Dae Sung Kim ◽  
Mi Seon Park ◽  
Yeon Suk Jang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
High Purity ◽  
Growth Direction ◽  
Source Materials ◽  
Better Than

Two SiC crystals were grown using SiC source powder with different level of purity and then the effect of the purity of SiC source materials on the final electrical properties has been systematically observed. Furthermore, the variation of vanadium amount according to the growth direction of vanadium doped semi-insulated SiC single crystals has been investigated. The quality of SiC crystal grown using SiC source powder with higher purity was definitely better than SiC crystal with lower purity. SiC crystals having an average resistivity value of about 1×1010 Ωcm were successfully obtained. In the result of COREMA measurement, the use of high purity SiC powder was revealed to obtain wafers with better uniformity in resistivity value.

Effect of annealing on contact performance and electrical properties of p-type high purity germanium single crystal

2013 ◽  
Vol 113 (1) ◽  
pp. 207-213 ◽  
Author(s):  
Gang Yang ◽  
Dongming Mei ◽  
Jayesh Govani ◽  
Guojian Wang ◽  
Muhammad Khizar
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
High Purity ◽  
Germanium Single Crystal ◽  
High Purity Germanium ◽  
P Type

Electrical properties of high purity tin dioxide doped with antimony

1987 ◽  
Vol 22 (3) ◽  
pp. 915-918 ◽  
Author(s):  
Keizo Uematsu ◽  
Nobuyasu Mizutani ◽  
Masanori Kato
Keyword(s):  
Electrical Properties ◽  
High Purity ◽  
Tin Dioxide
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