Electrical properties of high purity tin dioxide doped with antimony

1987 ◽  
Vol 22 (3) ◽  
pp. 915-918 ◽  
Author(s):  
Keizo Uematsu ◽  
Nobuyasu Mizutani ◽  
Masanori Kato
Keyword(s):  
Electrical Properties ◽  
High Purity ◽  
Tin Dioxide

Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

1991 ◽  
Vol 110 (4) ◽  
pp. 910-914 ◽  
Author(s):  
K. Rakennus ◽  
K. Tappura ◽  
T. Hakkarainen ◽  
H. Asonen ◽  
R. Laiho ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam ◽  
Gas Source ◽  
Interface Effects

scholarly journals Crystal Structure, Lattice Strain, Morphology, and Electrical Properties of SnO2 Nanoparticles Induced by Low Calcination Temperature

2020 ◽  
Vol 2020 ◽  
pp. 1-10
Author(s):  
Panya Khaenamkaew ◽  
Dhonluck Manop ◽  
Chaileok Tanghengjaroen ◽  
Worasit Palakawong Na Ayuthaya
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Calcination Temperature ◽  
Tin Dioxide ◽  
Lattice Strain ◽  
Dielectric Constants ◽  
Precipitation Method ◽  
Calcination Temperatures ◽  
Sensing Applications ◽  
Crystallite Sizes

The electrical properties of tin dioxide (SnO2) nanoparticles induced by low calcination temperature were systematically investigated for gas sensing applications. The precipitation method was used to prepare SnO2 powders, while the sol-gel method was adopted to prepare SnO2 thin films at different calcination temperatures. The characterization was done by X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM). The samples were perfectly matched with the rutile tetragonal structure. The average crystallite sizes of SnO2 powders were 45 ± 2, 50 ± 2, 62 ± 2, and 65 ± 2 nm at calcination temperatures of 300, 350, 400, and 450°C, respectively. SEM images and AFM topographies showed an increase in particle size and roughness with the rise in calcination temperature. The dielectric constant decreased with the increase in the frequency of the applied signals but increased on increasing calcination temperature. By using the UV-Vis spectrum, the direct energy bandgaps of SnO2 thin films were found as 4.85, 4.80, 4.75, and 4.10 eV for 300, 350, 400, and 450°C, respectively. Low calcination temperature as 300°C allows smaller crystallite sizes and lower dielectric constants but increases the surface roughness of SnO2, while lattice strain remains independent. Thus, low calcination temperatures of SnO2 are promising for electronic devices like gas sensors.

The effects of high purity MgO nano-powders on the electrical properties of AC-PDPs

2010 ◽  
Vol 10 (6) ◽  
pp. 1378-1382 ◽  
Author(s):  
Jong-Seo Choi ◽  
Sung-Hwan Moon ◽  
Jae-Hyuk Kim ◽  
Gil-Ho Kim
Keyword(s):  
Electrical Properties ◽  
High Purity

scholarly journals Poole-Frenkel Conduction in Cu/Nano-SnO2/Cu Arrangement

2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Hossein Mahmoudi Chenari ◽  
Hassan Sedghi ◽  
Mohammad Talebian ◽  
Mir Maqsoud Golzan ◽  
Ali Hassanzadeh
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Tin Dioxide ◽  
Current Flow ◽  
Sandwich Structures ◽  
Conduction Band Edge ◽  
Flow Mechanism ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Limited Conduction

It is well known that metal/Tin-dioxide/metal sandwich structures exhibit a field-assisted lowering of the potential barrier between donor-like center and the conduction band edge, known as the Poole-Frenkel effect. This behavior is indicated by a linear dependence of Iog  on , where is the current density, and is the applied voltage. In this study, the electrical properties of Cu/nano-SnO2/Cu sandwich structures were investigated through current-voltage measurements at room temperature. Also, an attempt to explore the governing current flow mechanism was tried. Our results indicate that noticeable feature appearing clearly in the current-voltage characterization is the Poole-Frenkel and space-charge-limited conduction mechanisms.

Chemical process to normalize the electrical properties of a-Se

1986 ◽  
Vol 1 (1) ◽  
pp. 10-11 ◽  
Author(s):  
S. S. Badesha ◽  
M. A. Abkowitz ◽  
F. E. Knier
Keyword(s):  
Electrical Properties ◽  
High Purity ◽  
Chemical Process ◽  
Vacuum Evaporation ◽  
Amorphous Selenium ◽  
Electrical Characteristics ◽  
Prior Work ◽  
Amorphous Films ◽  
Specific Chemical ◽  
Chemical Procedure

The influence of specific chemical dopants on the electrophotographic behavior of selenium and its alloys has been established in prior work. This communication describes a chemical procedure that has been found effective in removing electronically active impurities from amorphous selenium. The methodology involves converting contaminated selenium into a chemical intermediate that is separated by selective alcoholic dissolution and then reduced to high-purity selenium. The electrical characteristics of the amorphous films obtained by vacuum evaporation of the latter are determined directly from analysis of xerographic potentials.

Variation of Vanadium Incorporation in Semi-Insulating SiC Single Crystals Grown by PVT Method

2019 ◽  
Vol 963 ◽  
pp. 30-33
Author(s):  
Chae Young Lee ◽  
Jeong Min Choi ◽  
Dae Sung Kim ◽  
Mi Seon Park ◽  
Yeon Suk Jang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
High Purity ◽  
Growth Direction ◽  
Source Materials ◽  
Better Than

Two SiC crystals were grown using SiC source powder with different level of purity and then the effect of the purity of SiC source materials on the final electrical properties has been systematically observed. Furthermore, the variation of vanadium amount according to the growth direction of vanadium doped semi-insulated SiC single crystals has been investigated. The quality of SiC crystal grown using SiC source powder with higher purity was definitely better than SiC crystal with lower purity. SiC crystals having an average resistivity value of about 1×1010 Ωcm were successfully obtained. In the result of COREMA measurement, the use of high purity SiC powder was revealed to obtain wafers with better uniformity in resistivity value.

Optical and electrical properties of tin-dioxide films

1981 ◽  
Vol 4 (4) ◽  
pp. 397-407 ◽  
Author(s):  
C. Bellecci ◽  
M. Camarca ◽  
M. Conti ◽  
M. La Rotonda ◽  
G. Piccini ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Tin Dioxide ◽  
Optical And Electrical Properties
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