germanium single crystal
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2020 ◽  
Vol 128 (2) ◽  
pp. 250
Author(s):  
В.С. Хоркин ◽  
В.Б. Волошинов ◽  
А.И. Ефимова ◽  
Л.А. Кулакова

We examined the acoustical, optical and acousto-optical properties amorphous alloys based on germanium, selenium, silicium and tellurium. The phase velocities of longitudinal acoustic waves and the value of acousto-optic figure of merit of the tellurium-based compounds were measured using the infrared sources of light radiation on the wavelength λ = 3.39 μm. We measured the acousto-optic figure of merit of germanium single crystal in case of diffraction on the acoustic modes along [110] and [111].


Author(s):  
I. A. Kaplunov ◽  
A. I. Kolesnikov ◽  
A. I. Ivanova ◽  
O. I. Podkopaev ◽  
S. A. Tretiakov ◽  
...  

2013 ◽  
Vol 113 (1) ◽  
pp. 207-213 ◽  
Author(s):  
Gang Yang ◽  
Dongming Mei ◽  
Jayesh Govani ◽  
Guojian Wang ◽  
Muhammad Khizar

2012 ◽  
Vol 54 (3) ◽  
pp. 462-467 ◽  
Author(s):  
A. A. Selezenev ◽  
A. Yu. Aleinikov ◽  
P. V. Ermakov ◽  
N. S. Ganchuk ◽  
S. N. Ganchuk ◽  
...  

2011 ◽  
Vol 685 ◽  
pp. 141-146 ◽  
Author(s):  
Miao Miao Li ◽  
Xiao Ping Su ◽  
De Shen Feng ◽  
Jian Long Zuo ◽  
Nan Li ◽  
...  

As the key component of single junction GaAs/Ge solar cells and GaAs/Ge solar cells, the quality of germanium single crystal affects the properties of space solar cell directly. The dislocation of germanium single crystals is the main impact factor on solar cells efficiency. Through measuring dislocation densities in the different positions of 4 inch <100> germanium single crystals produced by Czochralski method, we found that flower-shaped structure dislocations pattern was mainly caused by the inclusions. This paper briefly analyzed dislocations produced by inclusions, chemical etching pits method. SEM and EDS measurement methods were also employed to study the flower-shaped structure defects. A germanium single crystal with low dislocation density was obtained and the special defects were almost eliminated. The germanium single crystal with low dislocation density (PV) was obtained, which could meet the requirement of the GaAs/Ge solar cells.


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