Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications

2010 ◽  
Vol 10 (1) ◽  
pp. e54-e57 ◽  
Author(s):  
Insung Bae ◽  
Seok Ju Kang ◽  
Youn Jung Park ◽  
T. Furukawa ◽  
Cheolmin Park
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Non Volatile Memory ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Controllable switching properties in an individual CH3NH3PbI3 micro/nanowire-based transistor for gate voltage and illumination dual-driving non-volatile memory

2019 ◽  
Vol 7 (14) ◽  
pp. 4259-4266 ◽  
Author(s):  
Zhen Hong ◽  
Jie Zhao ◽  
Kaifa Huang ◽  
Baochang Cheng ◽  
Yanhe Xiao ◽  
...  
Keyword(s):  
Visible Light ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Non Volatile Memory ◽  
Effect Transistor ◽  
Volatile Memory

For the field effect transistor based on an individual CH3NH3PbI3 (MAPbI3) micro/nanowire, the conductance can accurately be controlled by gate voltage and visible light, showing gate voltage and illumination dual-drive non-volatile memory feature.

Non-volatile memory behavior of interfacial InOx layer in InAs nano-wire field-effect transistor for neuromorphic application

2020 ◽  
pp. 148483
Author(s):  
Gyo Sub Lee ◽  
Jae-Seung Jeong ◽  
Min Kyu Yang ◽  
Jin Dong Song ◽  
Young Tack Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Non Volatile Memory ◽  
Effect Transistor ◽  
Volatile Memory

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

Characteristics of SrBi2Ta2O9 thin films prepared by pulsed laser deposition for non-volatile memory applications

2000 ◽  
Vol 375 (1-2) ◽  
pp. 200-204 ◽  
Author(s):  
Xinhua Zhu ◽  
Yiming Liu ◽  
Zhenghua An ◽  
Tao Zhu ◽  
Zhuangchun Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

scholarly journals Morphology and Field-Effect-Transistor Mobility in Tetracene Thin Films

2005 ◽  
Vol 15 (3) ◽  
pp. 375-380 ◽  
Author(s):  
F. Cicoira ◽  
C. Santato ◽  
F. Dinelli ◽  
M. Murgia ◽  
M. A. Loi ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

2010 ◽  
Vol 107 (2) ◽  
pp. 024101 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuhito Gotoh ◽  
Hiroshi Tsuji ◽  
Kiyomi Nakajima ◽  
Masataka Imura ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Crystal Diamond ◽  
Effect Transistor

Sub-micron field-effect transistor using granular NbN thin films

1993 ◽  
Vol 3 (1) ◽  
pp. 1987-1990 ◽  
Author(s):  
L. Zhang ◽  
N. Yoshikawa ◽  
M. Sugahara
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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