Sub-micron field-effect transistor using granular NbN thin films

1993 ◽  
Vol 3 (1) ◽  
pp. 1987-1990 ◽  
Author(s):  
L. Zhang ◽  
N. Yoshikawa ◽  
M. Sugahara
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

scholarly journals Morphology and Field-Effect-Transistor Mobility in Tetracene Thin Films

2005 ◽  
Vol 15 (3) ◽  
pp. 375-380 ◽  
Author(s):  
F. Cicoira ◽  
C. Santato ◽  
F. Dinelli ◽  
M. Murgia ◽  
M. A. Loi ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

2010 ◽  
Vol 107 (2) ◽  
pp. 024101 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuhito Gotoh ◽  
Hiroshi Tsuji ◽  
Kiyomi Nakajima ◽  
Masataka Imura ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Crystal Diamond ◽  
Effect Transistor

Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films

2013 ◽  
Vol 15 (47) ◽  
pp. 20611 ◽  
Author(s):  
Ritsuko Eguchi ◽  
Xuexia He ◽  
Shino Hamao ◽  
Hidenori Goto ◽  
Hideki Okamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Effect Transistor

Bisperfluorophenyl-Substituted Thiophene Oligomers. Organic Semiconductors with Complementary-Type Carrier Mobility

2002 ◽  
Vol 736 ◽  
Author(s):  
Antonio Facchetti ◽  
Howard E. Katz ◽  
Tobin J. Marks
Keyword(s):  
Thin Films ◽  
Cyclic Voltammetry ◽  
Molecular Characterization ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Photoluminescence Spectroscopy ◽  
Design Synthesis ◽  
Effect Transistor

ABSTRACTThe design, synthesis, and properties of two mixed perfluorophenyl-thiophene oligomers 5,5″′-diperfluorophenyl-2,2′:5′,2″:5″,2″′:5″′,2″″:5″″,2″″′-quaterthiophene (2) and 5,5′-bis{1-[4-(thien-2-yl)-2,3,5,6-tetrafluorophenyl)] }-2,2′-dithiophene (3) are presented. Molecular characterization included the following techniques: multinuclear NMR, DSC and TGA, optical UV-Vis and photoluminescence spectroscopy, and cyclic voltammetry. Thin films can be easily grown by vacuum evaporation and have been characterized by optical UV-Vis and photoluminescence, XRD, and field-effect transistor measurements. Electron and hole mobilities of 0.06–0.08 cm2/(V s) and 0.001–0.003 cm2/(V s) were found for 2 and 3, respectively.

Experimental study of a field-effect transistor using granular thin films

1991 ◽  
Vol 27 (2) ◽  
pp. 3268-3271 ◽  
Author(s):  
N. Yoshikawa ◽  
L. Zhang ◽  
M. Sugahara
Keyword(s):  
Thin Films ◽  
Experimental Study ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Spin Speed and Duration Dependence of TiO2Thin Films pH Sensing Behavior

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Muhammad AlHadi Zulkefle ◽  
Rohanieza Abdul Rahman ◽  
Khairul Aimi Yusof ◽  
Wan Fazlida Hanim Abdullah ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Oxide Semiconductor ◽  
Ph Sensing ◽  
Spin Speed ◽  
Coating Method ◽  
Effect Transistor ◽  
Sensing Membrane

Titanium dioxide (TiO2) thin films were applied as the sensing membrane of an extended-gate field-effect transistor (EGFET) pH sensor. TiO2thin films were deposited by spin coating method and the influences of the spin speed and spin duration on the pH sensing behavior of TiO2thin films were investigated. The spin coated TiO2thin films were connected to commercial metal-oxide-semiconductor field-effect transistor (MOSFET) to form the extended gates and the MOSFET was integrated in a readout interfacing circuit to complete the EGFET pH sensor system. For the spin speed parameter investigation, the highest sensitivity was obtained for the sample spun at 3000 rpm at a fixed spinning time of 60 s, which was 60.3 mV/pH. The sensitivity was further improved to achieve 68 mV/pH with good linearity of 0.9943 when the spin time was 75 s at the speed of 3000 rpm.

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