Raman scattering investigation of hydrogen and nitrogen ion implanted ZnO thin films

2008 ◽  
Vol 8 (3-4) ◽  
pp. 291-294 ◽  
Author(s):  
J. Kennedy ◽  
B. Sundrakannan ◽  
R.S. Katiyar ◽  
A. Markwitz ◽  
Z. Li ◽  
...  
2013 ◽  
Vol 62 (3) ◽  
pp. 037703
Author(s):  
Yang Tian-Yong ◽  
Kong Chun-Yang ◽  
Ruan Hai-Bo ◽  
Qin Guo-Ping ◽  
Li Wan-Jun ◽  
...  

2019 ◽  
Vol 9 (7) ◽  
pp. 3098 ◽  
Author(s):  
Zheng Huang ◽  
Haibo Ruan ◽  
Hong Zhang ◽  
Dongping Shi ◽  
Wanjun Li ◽  
...  

2020 ◽  
Vol 126 (6) ◽  
Author(s):  
A. H. Ramezani ◽  
S. Hoseinzadeh ◽  
Zh. Ebrahiminejad

2014 ◽  
Vol 104 (12) ◽  
pp. 122902 ◽  
Author(s):  
Y. H. Gao ◽  
J. Yang ◽  
H. Shen ◽  
J. L. Sun ◽  
X. J. Meng ◽  
...  

2013 ◽  
Vol 115 (3) ◽  
pp. 843-849 ◽  
Author(s):  
Arun Aravind ◽  
K. Hasna ◽  
M. K. Jayaraj ◽  
Mukesh Kumar ◽  
Ramesh Chandra

2007 ◽  
Vol 7 (11) ◽  
pp. 4021-4024 ◽  
Author(s):  
Gi-Seok Heo ◽  
Sang-Jin Hong ◽  
Jong-Woon Park ◽  
Bum-Ho Choi ◽  
Jong-Ho Lee ◽  
...  

We have fabricated boron ion-implanted ZnO thin films by ion implantation into sputtered ZnO thin films on a glass substrate. An investigation of the effects of ion doses and activation time on the electrical and optical properties of the films has been made. The electrical sheet resistance and resistivity of the implanted films are observed to increase with increasing rapid thermal annealing (RTA)time, while decreasing as the ion dose increases. Without any RTA process, the variation of the carrier density is insensitive to the ion dose. With the RTA process, however, the carrier density of the implanted films increases and approaches that of the un-implanted ZnO film as the ion dose increases. On the other hand, the carrier mobility is shown to decrease with increasing ion doses when no RTA process is applied. With the RTA process, however, there is almost no change in the mobility. We have achieved the optical transmittance as high as 87% within the visible wavelength range up to 800 nm. It is also demonstrated that the work function can be engineered by changing the ion dose during the ion implantation process. We have found that the work function decreases as the ion dose increases.


2015 ◽  
Vol 773-774 ◽  
pp. 739-743
Author(s):  
A.N. Afaah ◽  
N.A.M. Asib ◽  
Aadila Aziz ◽  
Ruziana Mohamed ◽  
Kevin Alvin Eswar ◽  
...  

Mist-atomization deposition method was applied in order to grow ZnO nanoparticles on Au-seeded glass substrates acting as seeded template. Ag doped ZnO thin films were deposited on ZnO seeded templates by solution-immersion method. The influence of Ag doping content on the optical and Raman scattering properties of ZnO films were systematically investigated by UV-Vis transmittance measurement measured by ultra-violet visible spectroscopy (UV-Vis) and Raman scattering spectrum measured by Raman spectroscopy under room temperature. From UV-Vis transmittance measurement, the incorporation of Ag dopant to the ZnO makes the transmittance wavelength shifted to the shorter wavelength as compared to the pure ZnO. From Raman spectra, 4 cm-1 downshift is observed in Ag-doped thin films as compared to pure ZnO thin films. This Raman peak shift shows that a tensile stress existed in the Ag-doped ZnO film.


2006 ◽  
Vol 39 (1-4) ◽  
pp. 41-49 ◽  
Author(s):  
G. Brauer ◽  
W. Anwand ◽  
W. Skorupa ◽  
H. Schmidt ◽  
M. Diaconu ◽  
...  

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