A type-II GaSe/HfS2 van der Waals heterostructure as promising photocatalyst with high carrier mobility

2020 ◽  
Vol 534 ◽  
pp. 147607 ◽  
Author(s):  
Mohammed M. Obeid ◽  
Asadollah Bafekry ◽  
Sajid Ur Rehman ◽  
Chuong V. Nguyen
Keyword(s):  
Carrier Mobility ◽  
Van Der Waals ◽  
Type Ii ◽  
Van Der Waals Heterostructure ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals High mobility in a van der Waals layered antiferromagnetic metal

2020 ◽  
Vol 6 (6) ◽  
pp. eaay6407 ◽  
Author(s):  
Shiming Lei ◽  
Jingjing Lin ◽  
Yanyu Jia ◽  
Mason Gray ◽  
Andreas Topp ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Carrier Mobility ◽  
Magnetic Order ◽  
Van Der Waals ◽  
High Mobility ◽  
Fundamental Physics ◽  
Spintronic Devices ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Very High

Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility—a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe3. The electron mobility is beyond 60,000 cm2 V−1 s−1, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe3 is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe3 can be exfoliated to ultrathin flakes of three monolayers.

A C2N/ZnSe heterostructure with type-II band alignment and excellent photocatalytic water splitting performance

2021 ◽  
Author(s):  
Yifan Rao ◽  
Fusheng Zhang ◽  
Bao Zhu ◽  
Hui Li ◽  
Kai Zheng ◽  
...  
Keyword(s):  
Binding Energy ◽  
Water Splitting ◽  
Light Absorption ◽  
Carrier Mobility ◽  
Band Alignment ◽  
Type Ii ◽  
Strong Light ◽  
Photocatalytic Water Splitting ◽  
High Carrier Mobility ◽  
High Carrier

A type-II C2N/ZnSe heterostructure with strong light-absorption ability, high carrier mobility and low exciton binding energy, exhibits excellent photocatalytic water splitting performance

Electron channel with high carrier mobility at the interface of type-II broken-gapp-GaInAsSb/p-InAs single heterojunctions

1998 ◽  
Vol 24 (1) ◽  
pp. 105-110 ◽  
Author(s):  
M.P. Mikhailova ◽  
T.I. Voronina ◽  
T.S. Lagunova ◽  
K.D. Moiseev ◽  
S.A. Obukhov ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Type Ii ◽  
Electron Channel ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional n -InSe/ p -GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance

2018 ◽  
Vol 97 (11) ◽  
Author(s):  
Cong-xin Xia ◽  
Juan Du ◽  
Xiao-wei Huang ◽  
Wen-bo Xiao ◽  
Wen-qi Xiong ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Van Der Waals ◽  
Two Dimensional ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals Modulation of silicene properties by AsSb with van der Waals interaction

RSC Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 5827-5835 ◽  
Author(s):  
Cui Jin ◽  
Ying Dai ◽  
Wei Wei ◽  
Qilong Sun ◽  
Xinru Li ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Van Der Waals ◽  
Van Der Waals Interaction ◽  
Promising Material ◽  
High Carrier Mobility ◽  
High Carrier

Our present work provides a new promising material AsSb monlayer as the substrate for silicene with a negligible mismatch, sizable band gap and high carrier mobility.

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