scholarly journals Modulation of silicene properties by AsSb with van der Waals interaction

RSC Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 5827-5835 ◽  
Author(s):  
Cui Jin ◽  
Ying Dai ◽  
Wei Wei ◽  
Qilong Sun ◽  
Xinru Li ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Van Der Waals ◽  
Van Der Waals Interaction ◽  
Promising Material ◽  
High Carrier Mobility ◽  
High Carrier

Our present work provides a new promising material AsSb monlayer as the substrate for silicene with a negligible mismatch, sizable band gap and high carrier mobility.

Germanene/GaGeTe heterostructure: a promising electric-field induced data storage device with high carrier mobility

2020 ◽  
Vol 22 (9) ◽  
pp. 5163-5169 ◽  
Author(s):  
Fu-Bao Zheng ◽  
Liang Zhang ◽  
Jin Zhang ◽  
Pei-ji Wang ◽  
Chang-Wen Zhang
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Data Storage ◽  
Carrier Mobility ◽  
Electronic Devices ◽  
Storage Device ◽  
New Type ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Opening Up

Opening up a band gap without lowering high carrier mobility in germanene and finding suitable substrate materials to form van der Waals heterostructures have recently emerged as an intriguing way of designing a new type of electronic devices.

Valley-selective circular dichroism and high carrier mobility of graphene-like BC6N

Nanoscale ◽  
2018 ◽  
Vol 10 (27) ◽  
pp. 13179-13186 ◽  
Author(s):  
Xiaobiao Liu ◽  
Xikui Ma ◽  
Han Gao ◽  
Xiaoming Zhang ◽  
Haoqiang Ai ◽  
...  
Keyword(s):  
Circular Dichroism ◽  
Band Gap ◽  
Carrier Mobility ◽  
Direct Band Gap ◽  
Black Phosphorene ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Circular Dichroïsm

Graphene-like borocarbonitride (g-BC6N) has a direct-band gap of 1.833 eV, high carrier mobility comparable to that of black phosphorene and a pair of inequivalent valleys with opposite Berry curvatures in K and K′ points.

Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

2019 ◽  
Vol 7 (12) ◽  
pp. 3569-3575 ◽  
Author(s):  
Shifeng Qian ◽  
Xiaowei Sheng ◽  
Xian Xu ◽  
Yuxiang Wu ◽  
Ning Lu ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Ring Network ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.

Electronic structure of silicene: effects of the organic molecular adsorption and substrate

2017 ◽  
Vol 5 (3) ◽  
pp. 627-633 ◽  
Author(s):  
N. Gao ◽  
G. Y. Lu ◽  
Z. Wen ◽  
Q. Jiang
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Carrier Mobility ◽  
Molecular Adsorption ◽  
High Carrier Mobility ◽  
High Carrier

The band gap in silicene is opened by the TTF adsorption and silicane substrate pairing, and the high carrier mobility is retained.

Highly efficient heterojunction solar cells enabled by edge-modified tellurene nanoribbons

2020 ◽  
Vol 22 (48) ◽  
pp. 28414-28422
Author(s):  
Yunzhi Gao ◽  
Kai Wu ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Solar Cells ◽  
Visible Light ◽  
Band Gap ◽  
Light Absorption ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Visible Light Absorption ◽  
Heterojunction Solar Cells ◽  
High Carrier Mobility ◽  
High Carrier

Tellurene, a two-dimensional (2D) semiconductor, meets the requirements for optoelectronic applications with desirable properties, such as a suitable band gap, high carrier mobility, strong visible light absorption and high air stability.

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