Spectroscopic study on amorphous tantalum oxynitride thin films prepared by reactive gas-timing RF magnetron sputtering

2019 ◽  
Vol 492 ◽  
pp. 99-107 ◽  
Author(s):  
T. Lertvanithphol ◽  
W. Rakreungdet ◽  
C. Chananonnawathorn ◽  
P. Eiamchai ◽  
S. Limwichean ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Spectroscopic Study ◽  
Rf Magnetron Sputtering ◽  
Reactive Gas

scholarly journals Tailoring Properties of Hafnium Nitride Thin Film via Reactive Gas-Timing RF Magnetron Sputtering for Surface Enhanced-Raman Scattering Substrates

Crystals ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 78
Author(s):  
Nguentra Sucheewa ◽  
Winadda Wongwiriyapan ◽  
Annop Klamchuen ◽  
Michiko Obata ◽  
Masatsugu Fujishige ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Sers Substrate ◽  
Hafnium Nitride ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Reactive Gas

This study successfully demonstrated the tailoring properties of hafnium nitride (HfN) thin films via reactive gas-timing (RGT) RF magnetron sputtering for surface-enhanced Raman spectroscopy (SERS) substrate applications. The optimal RGT sputtering condition was investigated by varying the duration time of the argon and nitrogen gas sequence. The RGT technique formed thin films with a grain size of approximately 15 nm. Additionally, the atomic ratios of nitrogen and hafnium can be controlled between 0.24 and 0.28, which is greater than the conventional technique, resulting in a high absorbance in the long wavelength region. Moreover, the HfN thin film exhibited a high Raman signal intensity with an EF of 8.5 × 104 to methylene blue molecules and was capable of being reused five times. A superior performance of HfN as a SERS substrate can be attributed to its tailored grain size and chemical composition, which results in an increase in the hot spot effect. These results demonstrate that the RGT technique is a viable method for fabricating HfN thin films with controlled properties at room temperature, which makes them an attractive material for SERS and other plasmonic applications.

Chemical Characterization and Electrical Properties of Indium Oxynitride Grown by Reactive Gas-Timing RF Magnetron Sputtering

2010 ◽  
Vol 93-94 ◽  
pp. 443-446 ◽  
Author(s):  
A. Sungthong ◽  
P. Khomdet ◽  
S. Porntheeraphat ◽  
C. Hruanun ◽  
Amporn Poyai ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Mobility ◽  
Auger Electron ◽  
Chemical Characterization ◽  
Rf Magnetron Sputtering ◽  
Optical Phonons ◽  
Reactive Gas

This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O2:N2 timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E1(TO) at ~470 cm-1 and E1(LO) at ~570 cm-1 and also shifted with different O2:N2 timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O2:N2 timing is increased.

Spectroscopic study using FTIR, Raman, XPS and NEXAFS of carbon nitride thin films deposited by RF magnetron sputtering

2005 ◽  
Vol 482 (1-2) ◽  
pp. 167-171 ◽  
Author(s):  
B. Bouchet-Fabre ◽  
E. Marino ◽  
G. Lazar ◽  
K. Zellama ◽  
M. Clin ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Spectroscopic Study ◽  
Carbon Nitride ◽  
Rf Magnetron Sputtering

PHOTOREFLECTANCE STUDY OF AIN THIN FILMS GROWN BY REACTIVE GAS-TIMING RF MAGNETRON SPUTTERING

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4418-4422 ◽  
Author(s):  
N. KIETIPAISALSOPHON ◽  
W. BUNJONGPRU ◽  
J. NUKEAW
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Flow Rate ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Transition Energies ◽  
Gap Energy ◽  
Xrd Patterns ◽  
Reactive Gas

Band-gap energy of AIN thin films was investigated by room-temperature photoreflectance (PR) spectroscopy. Using rf magnetron sputtering, the reactive gas-timing technique was successfully applied to grow cubic-AIN thin films. The define XRD patterns of all deposited films show orientation of cubic structure in (111) and (200) planes. The PR spectra clearly exhibit a band-gap energy of cubic-AIN depending on the flow rate of N 2 gas. The band-gap transition energies were determined by fitting the PR spectra to theoretical line-shape expression. The band-gap transition energies decreased with increasing flow rate of N 2.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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