Growth and Characterization of Zinc Oxynitride Thin Films by Reactive Gas-Timing RF Magnetron Sputtering

2008 ◽  
Vol 47 (1) ◽  
pp. 653-656 ◽  
Author(s):  
Don Klaitabtim ◽  
Sirapat Pratontep ◽  
Jiti Nukeaw
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Reactive Gas

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

Characterization of Mo-AlNxOy Thin Films Deposited by RF Magnetron Sputtering

2017 ◽  
Vol s1 (1) ◽  
Author(s):  
Thyago Santos Braga ◽  
Marcos Massi ◽  
Argemiro Soares Silva Sobrinho ◽  
Fabio Dondeo Origo ◽  
Choyu Otani
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

Characterization of SiGe Thin Films Deposited by RF Magnetron Sputtering for Infrared Imaging Sensor

2010 ◽  
Author(s):  
K. Yamaki ◽  
S. Sekino ◽  
T. Tai ◽  
S. Nakamura ◽  
T. Yoshitake ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Infrared Imaging ◽  
Rf Magnetron Sputtering ◽  
Imaging Sensor
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