Electronic structure of molybdenum-involved amorphous silica buffer layer in MoOx/n-Si heterojunction

2019 ◽  
Vol 473 ◽  
pp. 20-24 ◽  
Author(s):  
Dongyun Chen ◽  
Ming Gao ◽  
Yazhou Wan ◽  
Yonghua Li ◽  
Haibo Guo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Buffer Layer ◽  
Amorphous Silica

scholarly journals Field Effect on Crystal Phase of Silicon in Si/CeO2/SiO2Structure

2008 ◽  
Vol 2008 ◽  
pp. 1-4
Author(s):  
Dmitry E. Milovzorov
Keyword(s):  
Electronic Structure ◽  
Spatial Distribution ◽  
Band Gap ◽  
Buffer Layer ◽  
Field Effect ◽  
Cerium Dioxide ◽  
Silicon Film ◽  
Crystal Phase ◽  
Great Role ◽  
Defect Levels

The structural, optical, and conductivity properties of silicon film deposited on cerium dioxide buffer layer were studied. The electronic structure of system consists of various defect levels inside band gap. The temperature spatial distribution plays a great role in silicon crystallization. The field destruction of crystal phase and its restoration, after annealing, were investigated.

Improving performance by Na doping of a buffer layer-chemical and electronic structure of the InxSy:Na/CuIn(S,Se)2thin-film solar cell interface

2018 ◽  
Vol 26 (5) ◽  
pp. 359-366 ◽  
Author(s):  
Dirk Hauschild ◽  
Frank Meyer ◽  
Andreas Benkert ◽  
Dagmar Kreikemeyer-Lorenzo ◽  
Thomas Dalibor ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Solar Cell ◽  
Buffer Layer ◽  
Na Doping ◽  
Cell Interface

Reassessment of the Electronic Structure of Cr(VI) Sites Supported on Amorphous Silica and Implications for Cr Coordination Number

2018 ◽  
Vol 122 (8) ◽  
pp. 4349-4358 ◽  
Author(s):  
Nathan M. Peek ◽  
David B. Jeffcoat ◽  
Cristina Moisii ◽  
Lambertus van de Burgt ◽  
Salvatore Profeta ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Coordination Number ◽  
Amorphous Silica

scholarly journals Numerical study of the electronic structure of amorphous silica

1997 ◽  
Vol 56 (15) ◽  
pp. 9469-9476 ◽  
Author(s):  
Thorsten Koslowski ◽  
Walter Kob ◽  
Katharina Vollmayr
Keyword(s):  
Electronic Structure ◽  
Amorphous Silica ◽  
Numerical Study

Crystal Chemistry and Electronic Structure of the Photovoltaic Buffer Layer, (In1-xAlx)2S3

2011 ◽  
Vol 23 (23) ◽  
pp. 5168-5176 ◽  
Author(s):  
A. Lafond ◽  
X. Rocquefelte ◽  
M. Paris ◽  
C. Guillot-Deudon ◽  
V. Jouenne
Keyword(s):  
Electronic Structure ◽  
Buffer Layer ◽  
Crystal Chemistry

ChemInform Abstract: Crystal Chemistry and Electronic Structure of the Photovoltaic Buffer Layer, (In1-xAlx)2S3.

ChemInform ◽  
2012 ◽  
Vol 43 (9) ◽  
pp. no-no
Author(s):  
A. Lafond ◽  
X. Rocquefelte ◽  
M. Paris ◽  
C. Guillot-Deudon ◽  
V. Jouenne
Keyword(s):  
Electronic Structure ◽  
Buffer Layer ◽  
Crystal Chemistry

scholarly journals Исследование влияния переходного слоя нанопористого кремния на атомное и электронное строение, а также оптические свойства гетероструктур A-=SUP=-III-=/SUP=-N/por-Si, выращенных методом плазменно-активированной молекулярно-пучковой эпитаксии

2019 ◽  
Vol 53 (7) ◽  
pp. 1010
Author(s):  
П.В. Середин ◽  
А.С. Леньшин ◽  
Д.С. Золотухин ◽  
Д.Л. Голощапов ◽  
А.М. Мизеров ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Structural Properties ◽  
Molecular Beam ◽  
Diameter Distribution ◽  
Structure Morphology ◽  
Nanoporous Si ◽  
Pl Intensity

This paper reports on influence of the nanoporous Si buffer layer on morphological, physical and structural properties of the InxGa1-xN layer with nanocolumnar morphology of the surface, grown by plasma assisted molecular beam epitaxy on the traditional Si(111) substrates. By means of various structural and spectroscopy methods electronic structure, morphology of the surface and optical properties of grown heterostructures was studied. We showed that usage of por-Si ad-layer helps to achieve more isotropic InGaN nanocolumns diameter distribution as well as to increase PL intensity up to 25%.

Tuning electronic structure of monolayer InP3 in contact with graphene or Ni: effect of a buffer layer and intrinsic In and P-vacancy

2019 ◽  
Vol 21 (3) ◽  
pp. 1285-1293 ◽  
Author(s):  
Zhongjun Li ◽  
Mingzhi Qian ◽  
Lingling Song ◽  
Liang Ma ◽  
Huaili Qiu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Buffer Layer ◽  
Ohmic Contact ◽  
Intrinsic Defects

Ohmic contact in m-InP3 and G or Ni interface is achieved by introducing intrinsic defects and inserting a buffer layer.

Electronic structure and magnetic behavior of ultra-thin Fe films grown on W(110) with a Co buffer layer

2020 ◽  
Vol 243 ◽  
pp. 146977
Author(s):  
A. Calloni ◽  
M.S. Jagadeesh ◽  
M. Zani ◽  
L. Duò ◽  
F. Ciccacci ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Buffer Layer ◽  
Magnetic Behavior
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