scholarly journals Numerical study of the electronic structure of amorphous silica

1997 ◽  
Vol 56 (15) ◽  
pp. 9469-9476 ◽  
Author(s):  
Thorsten Koslowski ◽  
Walter Kob ◽  
Katharina Vollmayr
2018 ◽  
Vol 122 (8) ◽  
pp. 4349-4358 ◽  
Author(s):  
Nathan M. Peek ◽  
David B. Jeffcoat ◽  
Cristina Moisii ◽  
Lambertus van de Burgt ◽  
Salvatore Profeta ◽  
...  

2019 ◽  
Vol 473 ◽  
pp. 20-24 ◽  
Author(s):  
Dongyun Chen ◽  
Ming Gao ◽  
Yazhou Wan ◽  
Yonghua Li ◽  
Haibo Guo ◽  
...  

2017 ◽  
Vol 66 (18) ◽  
pp. 188802
Author(s):  
Wan Ya-Zhou ◽  
Gao Ming ◽  
Li Yong ◽  
Guo Hai-Bo ◽  
Li Yong-Hua ◽  
...  

Author(s):  
J. W. Mellowes ◽  
C. M. Chun ◽  
I. A. Aksay

Mullite (3Al2O32SiO2) can be fabricated by transient viscous sintering using composite particles which consist of inner cores of a-alumina and outer coatings of amorphous silica. Powder compacts prepared with these particles are sintered to almost full density at relatively low temperatures (~1300°C) and converted to dense, fine-grained mullite at higher temperatures (>1500°C) by reaction between the alumina core and the silica coating. In order to achieve complete mullitization, optimal conditions for coating alumina particles with amorphous silica must be achieved. Formation of amorphous silica can occur in solution (homogeneous nucleation) or on the surface of alumina (heterogeneous nucleation) depending on the degree of supersaturation of the solvent in which the particles are immersed. Successful coating of silica on alumina occurs when heterogeneous nucleation is promoted and homogeneous nucleation is suppressed. Therefore, one key to successful coating is an understanding of the factors such as pH and concentration that control silica nucleation in aqueous solutions. In the current work, we use TEM to determine the optimal conditions of this processing.


Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.


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