Tuning electronic structure of monolayer InP3 in contact with graphene or Ni: effect of a buffer layer and intrinsic In and P-vacancy

2019 ◽  
Vol 21 (3) ◽  
pp. 1285-1293 ◽  
Author(s):  
Zhongjun Li ◽  
Mingzhi Qian ◽  
Lingling Song ◽  
Liang Ma ◽  
Huaili Qiu ◽  
...  

Ohmic contact in m-InP3 and G or Ni interface is achieved by introducing intrinsic defects and inserting a buffer layer.

2008 ◽  
Vol 2008 ◽  
pp. 1-4
Author(s):  
Dmitry E. Milovzorov

The structural, optical, and conductivity properties of silicon film deposited on cerium dioxide buffer layer were studied. The electronic structure of system consists of various defect levels inside band gap. The temperature spatial distribution plays a great role in silicon crystallization. The field destruction of crystal phase and its restoration, after annealing, were investigated.


2000 ◽  
Vol 445 (1) ◽  
pp. 123-129 ◽  
Author(s):  
C.M. Fang ◽  
R.A. de Groot ◽  
M.M.J. Bischoff ◽  
H. van Kempen

1988 ◽  
Vol 148 (1) ◽  
pp. K33-K36 ◽  
Author(s):  
V. A. Gubanov ◽  
A. F. Zatsepin ◽  
V. S. Kortov ◽  
S. P. Freidman ◽  
G. B. Cherlov

2018 ◽  
Vol 26 (5) ◽  
pp. 359-366 ◽  
Author(s):  
Dirk Hauschild ◽  
Frank Meyer ◽  
Andreas Benkert ◽  
Dagmar Kreikemeyer-Lorenzo ◽  
Thomas Dalibor ◽  
...  

2008 ◽  
Vol 113 (1) ◽  
pp. 439-448 ◽  
Author(s):  
Kate G. Godinho ◽  
Aron Walsh ◽  
Graeme W. Watson

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