Tuning electronic structure of monolayer InP3 in contact with graphene or Ni: effect of a buffer layer and intrinsic In and P-vacancy
2019 ◽
Vol 21
(3)
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pp. 1285-1293
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Ohmic contact in m-InP3 and G or Ni interface is achieved by introducing intrinsic defects and inserting a buffer layer.
1988 ◽
Vol 148
(1)
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pp. K33-K36
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2018 ◽
Vol 26
(5)
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pp. 359-366
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2008 ◽
Vol 113
(1)
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pp. 439-448
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2014 ◽
Vol 616
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pp. 122-127
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1991 ◽
Vol 44
(19)
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pp. 10525-10535
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1996 ◽
Vol 57
(6)
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pp. 1121-1129
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