scholarly journals Tuning the stoichiometry and electrical properties of tantalum oxide thin films

2019 ◽  
Vol 470 ◽  
pp. 1071-1074 ◽  
Author(s):  
Yang Li ◽  
Simone Sanna ◽  
Kion Norrman ◽  
Dennis Valbjørn Christensen ◽  
Christian Søndergaard Pedersen ◽  
...  
1992 ◽  
Vol 284 ◽  
Author(s):  
William R. Hitchens ◽  
Wilbur C. Krusell ◽  
Daniel M. Dobkin

ABSTRACTTa2O5 films suitable for DRAM use have been deposited on silicon, polysilicon, and SiO2 by LP-CVD from Ta (OC2H5)5 and O2. Uniformity, reproducibility, and conformality are excellent. Annealed films are polycrystalline, and their surfaces are characterized by 2 nm high, 1 mgr;m diameter nucleation centers surrounded by circular crystallization fronts. The electrical properties of annealed films are dominated by a SiO2-rich layer which forms between the Ta2O5 and the silicon or polysilicon substrate.


2003 ◽  
Vol 93 (6) ◽  
pp. 3596-3604 ◽  
Author(s):  
Pushkar Jain ◽  
Vinay Bhagwat ◽  
Eugene J. Rymaszewski ◽  
Toh Ming Lu ◽  
Soren Berg ◽  
...  

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  

2013 ◽  
Vol 24 (12) ◽  
pp. 4925-4931
Author(s):  
Syed Mansoor Ali ◽  
Jan Muhammad ◽  
Syed Tajammul Hussain ◽  
Syed Danish Ali ◽  
Naeem Ur Rehman ◽  
...  

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