Effects ofIn-situSubstrate Heating and Postdeposition Annealing on Compositions and Electrical Properties of Tantalum Oxide Thin Films Grown by Reactive Sputtering

2006 ◽  
Vol 45 (1A) ◽  
pp. 160-164 ◽  
Author(s):  
Hsyi-En Cheng ◽  
Chien-Tang Mao
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tantalum Oxide ◽  
Reactive Sputtering ◽  
Oxide Thin Films

Structural, morphological and electrical properties of nickel oxide thin films deposited by reactive sputtering

2015 ◽  
Vol 357 ◽  
pp. 838-844 ◽  
Author(s):  
J. Keraudy ◽  
J. García Molleja ◽  
A. Ferrec ◽  
B. Corraze ◽  
M. Richard-Plouet ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Nickel Oxide ◽  
Reactive Sputtering ◽  
Oxide Thin Films ◽  
Nickel Oxide Thin Films

scholarly journals Tuning the stoichiometry and electrical properties of tantalum oxide thin films

2019 ◽  
Vol 470 ◽  
pp. 1071-1074 ◽  
Author(s):  
Yang Li ◽  
Simone Sanna ◽  
Kion Norrman ◽  
Dennis Valbjørn Christensen ◽  
Christian Søndergaard Pedersen ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tantalum Oxide ◽  
Oxide Thin Films

Formation of hydrated yttrium oxide and titanium oxide thin films by reactive sputtering in H2O atmosphere and their electrical properties

2014 ◽  
Vol 53 (6) ◽  
pp. 068002 ◽  
Author(s):  
Yoshio Abe ◽  
Ning Li ◽  
Kosuke Nishimoto ◽  
Midori Kawamura ◽  
Kyung Ho Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Titanium Oxide ◽  
Yttrium Oxide ◽  
Reactive Sputtering ◽  
Oxide Thin Films

Physical and Electrical Properties of Tantalum Oxide Thin Films Deposited by Low Pressure Chemical Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
William R. Hitchens ◽  
Wilbur C. Krusell ◽  
Daniel M. Dobkin
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Tantalum Oxide ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Oxide Thin Films ◽  
Pressure Chemical

ABSTRACTTa2O5 films suitable for DRAM use have been deposited on silicon, polysilicon, and SiO2 by LP-CVD from Ta (OC2H5)5 and O2. Uniformity, reproducibility, and conformality are excellent. Annealed films are polycrystalline, and their surfaces are characterized by 2 nm high, 1 mgr;m diameter nucleation centers surrounded by circular crystallization fronts. The electrical properties of annealed films are dominated by a SiO2-rich layer which forms between the Ta2O5 and the silicon or polysilicon substrate.

Electrical Properties of Amorphous Rh Oxide Thin Films Prepared by Reactive Sputtering

2000 ◽  
Vol 39 (Part 1, No. 1) ◽  
pp. 245-247 ◽  
Author(s):  
Yoshio Abe ◽  
Kiyohiko Kato ◽  
Midori Kawamura ◽  
Katsutaka Sasaki
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Reactive Sputtering ◽  
Oxide Thin Films ◽  
Rh Oxide
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