Revisiting kinetics of morin oxidation: Surface kinetics analysis

2017 ◽  
Vol 426 ◽  
pp. 497-503 ◽  
Author(s):  
Ndzondelelo Bingwa ◽  
Semakaleng Bewana ◽  
Marco Haumann ◽  
Reinout Meijboom
Keyword(s):  
Surface Kinetics ◽  
Kinetics Analysis ◽  
Kinetics Of ◽  
Oxidation Surface

Atomistic Simulation Study of Controlled Nanostructure Patterning

2003 ◽  
Vol 775 ◽  
Author(s):  
Byeongchan Lee ◽  
Kyeongjae Cho
Keyword(s):  
Diffusion Barrier ◽  
Atomistic Simulation ◽  
Degrees Of Freedom ◽  
Embedded Atom Method ◽  
Surface Kinetics ◽  
Bulk Properties ◽  
Embedded Atom ◽  
Kinetics Of ◽  
Dissociation Barrier ◽  
Strain Dependent

AbstractWe investigate the surface kinetics of Pt using the extended embedded-atom method, an extension of the embedded-atom method with additional degrees of freedom to include the nonbulk data from lower-coordinated systems as well as the bulk properties. The surface energies of the clean Pt (111) and Pt (100) surfaces are found to be 0.13 eV and 0.147 eV respectively, in excellent agreement with experiment. The Pt on Pt (111) adatom diffusion barrier is found to be 0.38 eV and predicted to be strongly strain-dependent, indicating that, in the compressive domain, adatoms are unstable and the diffusion barrier is lower; the nucleation occurs in the tensile domain. In addition, the dissociation barrier from the dimer configuration is found to be 0.82 eV. Therefore, we expect that atoms, once coalesced, are unlikely to dissociate into single adatoms. This essentially tells that by changing the applied strain, we can control the patterning of nanostructures on the metal surface.

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

Surface kinetics of N and O atoms in discharges

1996 ◽  
Vol 29 (4) ◽  
pp. 1021-1031 ◽  
Author(s):  
B Gordiets ◽  
C M Ferreira ◽  
J Nahorny ◽  
D Pagnon ◽  
M Touzeau ◽  
...  
Keyword(s):  
Surface Kinetics ◽  
Kinetics Of

Surface Kinetics of Hydrogen Entry into Zirconium Films

1990 ◽  
pp. 443-455
Author(s):  
C. A. Ward ◽  
M. B. Elmoselhi ◽  
L. Pataki ◽  
B. D. Warr
Keyword(s):  
Surface Kinetics ◽  
Kinetics Of

Growth Kinetics of Interfacial Intermetallic Compound in Al(AA4343)/Steel(SUS316) Clad Strip

2020 ◽  
Vol 993 ◽  
pp. 447-456
Author(s):  
Xiao Jun Zhang ◽  
Kun Yuan Gao ◽  
Xiu Hua Hu ◽  
Yu Sheng Ding ◽  
Guo Zhan Wang ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Annealing Temperature ◽  
Optical Microscope ◽  
Alloy Layer ◽  
Kinetics Analysis ◽  
Growth Constant ◽  
Transmission Electron ◽  
Dispersive System ◽  
The Relationship ◽  
Kinetics Of

The composition and microstructure of intermetallic compounds (IMC) at the interface of aluminum(AA4343)-stainless steel(SUS316) were studied upon annealing at 550°C for 1h to 20h and at 610°C for 15min to 10h by means of optical microscope(OM) , scanning electron microscope (SEM) with energy dispersive system(EDS) and transmission Electron Microscopy (TEM). The results showed that the IMC was of 4.3μm to 36.1μm thick during heat treatment at 550°C for 1h to 20h, and the IMC contained Al-Fe-Si-Cr-Ni-Mo and Al-Fe-Si -Ni. During annealing at 610°C for 15min to 5h, the thickness of IMC was 31.2 μm to 208 μm, and the IMC were mainly of η-Fe2Al5 and τ10- Al4Fe1.7Si at 550°C for 10h. As the annealing time extended to 10h, natural delamination occurred at the interface between the aluminum alloy layer and IMC layer. The growth kinetics analysis showed that the relationship between the thickness of IMC “X” and time “t” followed the relational equation X=(kt)n. For AA4343(solid) - SUS316(solid), n was 1/2, and the growth constant k = 1.9×10-13m2/s at annealing temperature of 550 °C. When the temperature was 610°C, AA4343 - SUS316 was a liquid-solid contact reaction, n was 1, the growth constant k=1.45×10-8m/s.

Control of the Surface Reactivity of the Si(100) Surface

1986 ◽  
Vol 75 ◽  
Author(s):  
John T. Yates ◽  
M. J. Bozack ◽  
L. Muehlhoff ◽  
W. J. Choyke
Keyword(s):  
Vapor Deposition ◽  
Active Sites ◽  
Surface Reaction ◽  
Adsorbed Layer ◽  
Chemical Vapor ◽  
Active Surface ◽  
Surface Reactivity ◽  
Surface Kinetics ◽  
Active Surface Sites ◽  
Kinetics Of

AbstractWe have used molecular beam methods and temperature programmed desorption to probe the reaction of several hydrocarbons with the Si(100) surface at cryogenic temperatures. It has been found that the kinetics of the surface reaction with the C=C bond can be strongly influenced by the production of active surface sites using prebombardment with Ar ions. The chemistry of the adsorbate is also influenced by electron bombardment of the adsorbed layer. Conversely, capping of active sites with atomic hydrogen retards the kinetics of the surface reaction. This work forms a first step in using the methods of surface kinetics and spectroscopy to probe the details of the elementary steps at work in chemical vapor deposition and plasma vapor deposition, leading to the production of SiC films.

O–Cu(001): I. BINDING THE SIGNATURES OF LEED, STM AND PES IN A BOND-FORMING WAY

2001 ◽  
Vol 08 (03n04) ◽  
pp. 367-402 ◽  
Author(s):  
CHANG Q. SUN
Keyword(s):  
Hydrogen Bond ◽  
Solid Surface ◽  
Kinetics Of Oxidation ◽  
Bond Forming ◽  
Chemisorbed Oxygen ◽  
Valence Electrons ◽  
Specific Oxidation ◽  
Kinetics Of ◽  
Oxidation Surface ◽  
Bonding Kinetics

This work consists of two sequential parts, which review the advances in uncovering the capacity of VLEED, STM and PES in revealing the nature and kinetics of oxidation bonding and its consequences for the behavior of atoms and valence electrons at a surface; and in quantifying the O–Cu(001) bonding kinetics. The first part describes the model in terms of bond making and its effect on the valence DOS and on the surface potential barrier (SPB) for surfaces with chemisorbed oxygen. One can replace the hydrogen in a H 2 O molecule with an arbitrary less electronegative element and extend the M 2 O to a solid surface with Goldschmidt contraction of the bond length, which formulates a specific oxidation surface with identification of atomic valences and their correpondence to the STM and PES signatures. As consequences of bond making, oxygen derives foou additional DOS features in the valence band and above, i.e. O–M bonding (~ -5 eV), oxygen nonbounding lone pairs (~ - 2 eV), holes (≤ EF ), and antibonding metal dipoles (≥ EF ), in addition to the hydrogen-bond-like formation. The evolution of O -1 to O -2 transforms the CuO 2 pairing off-centered pyramid in the c(2× 2)-2 O -1 into the CU 3 O 2 pairing tetrahedron in the [Formula: see text] phase on the Cu(001) surface. The new decoding technique has enabled the model to be justified and hence the capacity of VLEED, PES and STM to be fully uncovered in determining simultaneously the bond geometry, the SPB, the valence DOS, and their interdependence.

IN SITU STUDIES OF EPITAXIAL GROWTH BY SYNCHROTRON X-RAY DIFFRACTION

2006 ◽  
Vol 13 (02n03) ◽  
pp. 155-166 ◽  
Author(s):  
WOLFGANG BRAUN ◽  
KLAUS H. PLOOG
Keyword(s):  
Ostwald Ripening ◽  
Crystal Surface ◽  
High Energy ◽  
Molecular Beam Epitaxy Growth ◽  
X Rays ◽  
Surface Kinetics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Kinetics Of

X-rays are ideal to study the structure of crystals due to their weak interaction with matter and in most cases allow a quantitative analysis using kinematical theory. To study the incorporation of atoms during crystal growth and to analyze the kinetics on the crystal surface high primary beam intensities available at synchrotrons are required. Our studies of the molecular beam epitaxy growth of III–V semiconductors reveal that, despite their similarity in crystal structure, the surface kinetics of GaAs (001), InAs (001) and GaSb (001) differ strongly. GaAs shows an unexpectedly large coarsening exponent outside the predicted range of Ostwald ripening models during recovery. GaSb exhibits dramatically different surface morphology variations during growth and recovery. Overgrowth of GaAs by epitaxial MnAs demonstrates the ability of X-ray diffraction to follow an interface as it is buried during heteroepitaxy, which is not possible by reflection high-energy electron diffraction.

Sign in / Sign up

Export Citation Format

Share Document