Control of the Surface Reactivity of the Si(100) Surface

1986 ◽  
Vol 75 ◽  
Author(s):  
John T. Yates ◽  
M. J. Bozack ◽  
L. Muehlhoff ◽  
W. J. Choyke
Keyword(s):  
Vapor Deposition ◽  
Active Sites ◽  
Surface Reaction ◽  
Adsorbed Layer ◽  
Chemical Vapor ◽  
Active Surface ◽  
Surface Reactivity ◽  
Surface Kinetics ◽  
Active Surface Sites ◽  
Kinetics Of

AbstractWe have used molecular beam methods and temperature programmed desorption to probe the reaction of several hydrocarbons with the Si(100) surface at cryogenic temperatures. It has been found that the kinetics of the surface reaction with the C=C bond can be strongly influenced by the production of active surface sites using prebombardment with Ar ions. The chemistry of the adsorbate is also influenced by electron bombardment of the adsorbed layer. Conversely, capping of active sites with atomic hydrogen retards the kinetics of the surface reaction. This work forms a first step in using the methods of surface kinetics and spectroscopy to probe the details of the elementary steps at work in chemical vapor deposition and plasma vapor deposition, leading to the production of SiC films.

A Main Factor Determining the Uniform Step Coverage in Chemical Vapor Deposition

1998 ◽  
Vol 514 ◽  
Author(s):  
Chee Burm Shin ◽  
Gyeong Soon Hwang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Continuum Model ◽  
Surface Reaction ◽  
Chemical Vapor ◽  
Surface Kinetics ◽  
High Tendency ◽  
Step Coverage ◽  
Main Factor

ABSTRACTProfile evolution simulations during chemical vapor deposition based on a 2-D continuum model reveal that the type of surface kinetics plays an important role as a measure of determining step coverage of films deposited in a high aspect ratio trench or via. The linear surface kinetics, resulting from adsorption rate limitation, is found to be difficult to bring about conformal step coverage in a deep narrow trench without reducing the growth rate considerably; that is, under such a condition void free filling can not be achievable with holding an appropriate growth rate. High tendency of the precursor for chemical equilibrium on a surface, tending to cause the non-linear surface kinetics by surface reaction limitation, is mainly responsible for the significant improvement of step coverage in TEOS-based depositions.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

Hollow structure engineering of FeCo alloy nanoparticles electrospun in nitrogen-doped carbon enables high performance flexible all-solid-state zinc–air batteries

2020 ◽  
Vol 4 (4) ◽  
pp. 1747-1753 ◽  
Author(s):  
Yuanyuan Ma ◽  
Wenjie Zang ◽  
Afriyanti Sumboja ◽  
Lu Mao ◽  
Ximeng Liu ◽  
...  
Keyword(s):  
Active Sites ◽  
High Performance ◽  
Hollow Structure ◽  
Active Surface ◽  
Oxygen Electrode ◽  
Active Surface Area ◽  
Active Components ◽  
Nitrogen Doped Carbon ◽  
Structure Engineering ◽  
Kinetics Of

Hollow structuring of active components is an effective strategy to improve the kinetics of oxygen electrode catalysts, arising from the increased the active surface area, the defects on the exposed surface, and the accessible active sites.

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