Surface Kinetics of Polyphenylene Oxide Etching in a CF[sub 4]/O[sub 2]/Ar Downstream Microwave Plasma

2000 ◽  
Vol 147 (5) ◽  
pp. 1818 ◽  
Author(s):  
Kevin C. Hsu ◽  
Milo D. Koretsky
Keyword(s):  
Microwave Plasma ◽  
Surface Kinetics ◽  
Polyphenylene Oxide ◽  
Oxide Etching ◽  
Kinetics Of

Atomistic Simulation Study of Controlled Nanostructure Patterning

2003 ◽  
Vol 775 ◽  
Author(s):  
Byeongchan Lee ◽  
Kyeongjae Cho
Keyword(s):  
Diffusion Barrier ◽  
Atomistic Simulation ◽  
Degrees Of Freedom ◽  
Embedded Atom Method ◽  
Surface Kinetics ◽  
Bulk Properties ◽  
Embedded Atom ◽  
Kinetics Of ◽  
Dissociation Barrier ◽  
Strain Dependent

AbstractWe investigate the surface kinetics of Pt using the extended embedded-atom method, an extension of the embedded-atom method with additional degrees of freedom to include the nonbulk data from lower-coordinated systems as well as the bulk properties. The surface energies of the clean Pt (111) and Pt (100) surfaces are found to be 0.13 eV and 0.147 eV respectively, in excellent agreement with experiment. The Pt on Pt (111) adatom diffusion barrier is found to be 0.38 eV and predicted to be strongly strain-dependent, indicating that, in the compressive domain, adatoms are unstable and the diffusion barrier is lower; the nucleation occurs in the tensile domain. In addition, the dissociation barrier from the dimer configuration is found to be 0.82 eV. Therefore, we expect that atoms, once coalesced, are unlikely to dissociate into single adatoms. This essentially tells that by changing the applied strain, we can control the patterning of nanostructures on the metal surface.

Surface kinetics of N and O atoms in discharges

1996 ◽  
Vol 29 (4) ◽  
pp. 1021-1031 ◽  
Author(s):  
B Gordiets ◽  
C M Ferreira ◽  
J Nahorny ◽  
D Pagnon ◽  
M Touzeau ◽  
...  
Keyword(s):  
Surface Kinetics ◽  
Kinetics Of

Surface Kinetics of Hydrogen Entry into Zirconium Films

1990 ◽  
pp. 443-455
Author(s):  
C. A. Ward ◽  
M. B. Elmoselhi ◽  
L. Pataki ◽  
B. D. Warr
Keyword(s):  
Surface Kinetics ◽  
Kinetics Of

Control of the Surface Reactivity of the Si(100) Surface

1986 ◽  
Vol 75 ◽  
Author(s):  
John T. Yates ◽  
M. J. Bozack ◽  
L. Muehlhoff ◽  
W. J. Choyke
Keyword(s):  
Vapor Deposition ◽  
Active Sites ◽  
Surface Reaction ◽  
Adsorbed Layer ◽  
Chemical Vapor ◽  
Active Surface ◽  
Surface Reactivity ◽  
Surface Kinetics ◽  
Active Surface Sites ◽  
Kinetics Of

AbstractWe have used molecular beam methods and temperature programmed desorption to probe the reaction of several hydrocarbons with the Si(100) surface at cryogenic temperatures. It has been found that the kinetics of the surface reaction with the C=C bond can be strongly influenced by the production of active surface sites using prebombardment with Ar ions. The chemistry of the adsorbate is also influenced by electron bombardment of the adsorbed layer. Conversely, capping of active sites with atomic hydrogen retards the kinetics of the surface reaction. This work forms a first step in using the methods of surface kinetics and spectroscopy to probe the details of the elementary steps at work in chemical vapor deposition and plasma vapor deposition, leading to the production of SiC films.

IN SITU STUDIES OF EPITAXIAL GROWTH BY SYNCHROTRON X-RAY DIFFRACTION

2006 ◽  
Vol 13 (02n03) ◽  
pp. 155-166 ◽  
Author(s):  
WOLFGANG BRAUN ◽  
KLAUS H. PLOOG
Keyword(s):  
Ostwald Ripening ◽  
Crystal Surface ◽  
High Energy ◽  
Molecular Beam Epitaxy Growth ◽  
X Rays ◽  
Surface Kinetics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Kinetics Of

X-rays are ideal to study the structure of crystals due to their weak interaction with matter and in most cases allow a quantitative analysis using kinematical theory. To study the incorporation of atoms during crystal growth and to analyze the kinetics on the crystal surface high primary beam intensities available at synchrotrons are required. Our studies of the molecular beam epitaxy growth of III–V semiconductors reveal that, despite their similarity in crystal structure, the surface kinetics of GaAs (001), InAs (001) and GaSb (001) differ strongly. GaAs shows an unexpectedly large coarsening exponent outside the predicted range of Ostwald ripening models during recovery. GaSb exhibits dramatically different surface morphology variations during growth and recovery. Overgrowth of GaAs by epitaxial MnAs demonstrates the ability of X-ray diffraction to follow an interface as it is buried during heteroepitaxy, which is not possible by reflection high-energy electron diffraction.

Observation and control of the surface kinetics of InGaN for the elimination of phase separation

2012 ◽  
Vol 112 (1) ◽  
pp. 014909 ◽  
Author(s):  
Michael Moseley ◽  
Brendan Gunning ◽  
Jordan Greenlee ◽  
Jonathan Lowder ◽  
Gon Namkoong ◽  
...  
Keyword(s):  
Phase Separation ◽  
Surface Kinetics ◽  
And Control ◽  
Kinetics Of

scholarly journals Rate-Determining Steps of Oxygen Surface Exchange Kinetics on Sr2Fe1.5Mo0.5O6−δ

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 250 ◽  
Author(s):  
Denis A. Osinkin ◽  
Anna V. Khodimchuk ◽  
Natalia M. Porotnikova ◽  
Nina M. Bogdanovich ◽  
Andrey V. Fetisov ◽  
...  
Keyword(s):  
Oxygen Diffusion ◽  
Oxygen Adsorption ◽  
Dissociative Adsorption ◽  
Lanthanum Strontium Manganite ◽  
Surface Kinetics ◽  
Exchange Method ◽  
Surface Exchange ◽  
Concentration Dependences ◽  
Kinetics Of ◽  
Oxygen Surface

The oxygen surface kinetics of Sr2Fe1.5Mo0.5O6−δ was determined using the 16O2/18O2 isotope exchange method with gas phase analysis at 600–800 °C. The heterogeneous exchange rates (rH) and the oxygen diffusion coefficients (D) were calculated by processing the concentration dependences of the 18O fraction using Ezin’s model. The rates of oxygen dissociative adsorption (ra) and incorporation (ri) were calculated based on a model using the three exchange type rates. It has been established that the rates ra and ri were comparable in this temperature range. Assumptions were made about the effect of the chemical composition of the surface on the rate of oxygen adsorption. It was found that the oxygen exchange coefficient (k) of Sr2Fe1.5Mo0.5O6−δ is comparable to that of La0.6Sr0.4MnO3±δ oxide. High values of the oxygen diffusion coefficient were found for Sr2Fe1.5Mo0.5O6−δ. The values were comparable to those of the double cobaltite praseodymium-barium and exceed by more than an order those of lanthanum-strontium manganite.

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