Structural and electrical properties of heterojunction devices formed by spinning TIPS Pentacene thin films on n-Si substrates

2016 ◽  
Vol 388 ◽  
pp. 376-380 ◽  
Author(s):  
Ke Wang ◽  
Ya Huang ◽  
Ruofei Chen ◽  
Zhan Xu
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Si Substrates ◽  
Heterojunction Devices ◽  
Structural And Electrical Properties

Structural and Ferroelectric Properties of SrBi2Ta2O9 Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Kazushi Amanuma ◽  
Takashi Hase ◽  
Yoicht Mtyasaka
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Structural Change ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Si Substrates ◽  
Average Grain Size ◽  
Structural And Electrical Properties ◽  
Sims Analysis ◽  
Film Preparation

ABSTRACTStructural and electrical properties were investigated for chemically prepared SrBi2Ta2O9(SBT) thin films on Pt/Ti/SiO2/Si substrates. Good ferroelectric properties were obtained with a Pt top electrode: Pr=10.0μC/cm2 and Ec-34kV/cm. Au top electrodes resulted in smaller Pr. However, no fatigue was observed up to 109 switching cycles regardless of the top electrode material. Grains were spherical, not columnar, and the average grain size was 200nm. A marked structural change took place in the bottom Pt/Ti electrode during film preparation. The SIMS analysis indicates the reaction between Bi and Pt

Structural and Electrical Properties of Vanadium Tungsten Oxide Thin Films Grown on Pt/TiO2/SiO2/Si Substrates

2008 ◽  
Vol 569 ◽  
pp. 73-76
Author(s):  
Sung Pill Nam ◽  
Sung Gap Lee ◽  
Young Hie Lee
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Dielectric Constants ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Tungsten Oxide Thin Films

The V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V1.9W0.1O5 thin films annealed at 300°C were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300°C were about -3.7%/K.

ENHANCED STRUCTURAL AND ELECTRICAL PROPERTIES OF LEAD-FREE Y-DOPED (K, Na) NbO3 THIN FILMS

2015 ◽  
Vol 77 (21) ◽  
Author(s):  
Maziati Akmal ◽  
Umar Al-Amani ◽  
Mohd Warikh ◽  
Nurul Azuwa
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Lattice Structure ◽  
Sol Gel ◽  
Small Shift ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Gel Technique ◽  
A Site ◽  
Different Content

Yttrium- doped KNN thin films were grown on Si substrates using the sol-gel technique. The profound effects of Yttrium with different content element (mol % = 0, 0.1, 0.3, 0.5, 0.7 and 0.9) on the structural and electrical properties of KNN films were analyzed. The doped samples demonstrated a mainly uniform and homogenous microstructure with grain size less than 100 nm. The existence of Y Kα line shown in EDX spectrum confirmed the presence of Y-dopant in KNN based-compound. Small shift position of the Raman peaks indicated that Y incorporated on the interstitial A-site while broaden FWHM ascribed that Y preferably enters B-site lattice at high dopant concentration. The enhanced electrical resistivity at 0.5 mol % Y suggested that more conduction electrons were formed in KNN lattice structure.

Structural and Electrical Properties of Thermally Evaporated SnxSe1-x Thin Films

2011 ◽  
Vol 3 (10) ◽  
pp. 1-4 ◽  
Author(s):  
Bushra A Hasan ◽  
◽  
Ghuson H Mohamed ◽  
Amer A Ramadhan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural And Electrical Properties
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