ENHANCED STRUCTURAL AND ELECTRICAL PROPERTIES OF LEAD-FREE Y-DOPED (K, Na) NbO3 THIN FILMS

2015 ◽  
Vol 77 (21) ◽  
Author(s):  
Maziati Akmal ◽  
Umar Al-Amani ◽  
Mohd Warikh ◽  
Nurul Azuwa
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Lattice Structure ◽  
Sol Gel ◽  
Small Shift ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Gel Technique ◽  
A Site ◽  
Different Content

Yttrium- doped KNN thin films were grown on Si substrates using the sol-gel technique. The profound effects of Yttrium with different content element (mol % = 0, 0.1, 0.3, 0.5, 0.7 and 0.9) on the structural and electrical properties of KNN films were analyzed. The doped samples demonstrated a mainly uniform and homogenous microstructure with grain size less than 100 nm. The existence of Y Kα line shown in EDX spectrum confirmed the presence of Y-dopant in KNN based-compound. Small shift position of the Raman peaks indicated that Y incorporated on the interstitial A-site while broaden FWHM ascribed that Y preferably enters B-site lattice at high dopant concentration. The enhanced electrical resistivity at 0.5 mol % Y suggested that more conduction electrons were formed in KNN lattice structure.

Influence of Bi3.15Nd0.85Ti3O12 Buffer Layer on Structure and Electrical Properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 Thin Films

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Current Density ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Sol Gel Process

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

Optical, structural, and electrical properties of indium oxide thin films prepared by the sol-gel method

1997 ◽  
Vol 82 (2) ◽  
pp. 865-870 ◽  
Author(s):  
Radhouane Bel Hadj Tahar ◽  
Takayuki Ban ◽  
Yutaka Ohya ◽  
Yasutaka Takahashi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Oxide ◽  
Sol Gel ◽  
Oxide Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Structural And Electrical Properties

Composition dependence of phase structure and electrical properties of BiMnO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (77) ◽  
pp. 62713-62718 ◽  
Author(s):  
Peng Li ◽  
Wei Li ◽  
Jiwei Zhai ◽  
Bo Shen ◽  
Huarong Zeng ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Phase Structure ◽  
Composition Dependence ◽  
Sol Gel ◽  
Lead Free ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates

Lead-free (1 − x)Bi0.5(Na0.8K0.2)0.5TiO3-xBiMnO3 (BNKT-xBMO, 0 < x < 0.025) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol–gel method, and the effects of BiMnO3 addition on the crystal structure and electrical properties were systematically investigated.

Sm Doping Effects on Electrical Properties of Sol-Gel Derived SrBi2Ta 2O9 Films

2002 ◽  
Vol 747 ◽  
Author(s):  
Eisuke Tokumitsu ◽  
Masahito Kishi
Keyword(s):  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Ferroelectric Film ◽  
Si Substrates ◽  
Doping Effects ◽  
Gel Technique

ABSTRACTWe have characterized (Sr,Sm)Bi2Ta 2O9 (SSBT) films fabricated by the sol-gel technique on Pt/Ti/SiO2/Si substrates. For ferroelectric-gate FET applications, a ferroelectric film which has a small remanent polarization and a relatively large coercive field is required. It is demonstrated that Sm doping in ferroelectric SBT films is effective to reduce the remanent polarization and enhance the coercive field. Sr0.5Sm0.2Bi2.2Ta2O9 films (150nm) crystallized at 850°C exhibits good electrical properties with a remanent polarization of 1.7 μC/cm2 and a coercive fields of 85 kV/cm. These values are suitable for ferroelectric-gate FET applications.

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