Structural and electrical properties of Bi[sub 1.5]Mg[sub 1.0]Nb[sub 1.5]O[sub 7] thin films deposited on Pt/TiO[sub 2]/SiO[sub 2]/Si substrates by rf-magnetron sputtering

2008 ◽  
Vol 26 (4) ◽  
pp. 1277 ◽  
Author(s):  
Jun-Ku Ahn ◽  
Nguyen Duy Cuong ◽  
Soon-Gil Yoon ◽  
Chang-Soo Kim
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Structural And Electrical Properties

Synthesis and Characterization of Ce-Doped BZT Thin Films Deposited by a RF Magnetron Sputtering Method

2006 ◽  
Vol 321-323 ◽  
pp. 1336-1339
Author(s):  
Won Seok Choi ◽  
Young Park ◽  
Jin Hyo Boo ◽  
Junsin Yi ◽  
Byung You Hong
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Ceramic Capacitor ◽  
Diffraction Patterns ◽  
Lower Temperature

We investigated the structural and electrical properties of the 0.5% Ce-doped Ba(ZrxTi1-x)O3 (BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm for the MLCC (Multilayer Ceramic Capacitor) application. Ce-doped BZT films were prepared on Pt/Ti/SiO2/Si substrates by a RF magnetron sputtering system as a function of Ar/O2 ratio and substrate temperature. X-ray diffraction patterns were recorded for the samples deposited with three different substrate temperatures. The thickness and the surface roughness of the films deposited with different Ar/O2 ratios were measured. The oxygen gas, which was introduced during the film deposition, had an influence on the growth rate and the roughness of the film. The surface roughness and dielectric constant of the Ce-doped BZT film varied with Ar to O2 ratios (5:1, 2:1, and 1:1) from 1.21 nm to 2.33 nm and 84 to 149, respectively. The Ce-doped BZT film deposited at lower temperature has small leakage current and higher breakdown voltage.

Effect of film thickness on the structural and electrical properties of Ga-doped ZnO thin films prepared on glass and Al2O3 (0001) substrates by RF magnetron sputtering method

2009 ◽  
Vol 24 (2) ◽  
pp. 441-447 ◽  
Author(s):  
Seung Wook Shin ◽  
S.M. Pawar ◽  
Tae-Won Kim ◽  
Jong-Ha Moon ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Plane Orientation ◽  
Structural And Electrical Properties ◽  
Doped Zno

Thin films of Ga-doped ZnO (GZO) were prepared on glass and Al2O3 (0001) substrates by using RF magnetron sputtering at a substrate temperature of 350 °C, RF power of 175 W, and working pressure of 6 mTorr. The effect of film thickness and substrate type on the structural and electrical properties of the thin films was investigated. X-ray diffraction study showed that GZO thin films on glass substrates were grown as a polycrystalline hexagonal wurtzite phase with a c-axis preferred, out-of-plane orientation and random in-plane orientation. However, GZO thin films on Al2O3 (0001) substrates were epitaxially grown with an orientation relationship of . The structural images from scanning electron microscopy and atomic force microscopy showed that the GZO thin films on glass substrates had a rougher surface morphology than those on Al2O3 (0001) substrates. The electrical resistivity of 1000 nm-thick GZO thin films grown on glass and Al2O3 (0001) substrates was 3.04 × 10−4 Ωcm and 1.50 × 10−4 Ωcm, respectively. It was also found that the electrical resistivity difference between the films on the two substrates decreased from 9.48 × 10−4 Ωcm to 1.45 × 10−4 Ωcm with increasing the film thickness from 100 nm to 1000 nm.

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