Structural and magnetic characterization of ZnCo2O4 thin film prepared by pulsed laser deposition

2015 ◽  
Vol 357 ◽  
pp. 1212-1216 ◽  
Author(s):  
X.L. Wen ◽  
Z. Chen ◽  
E.H. Liu ◽  
X. Lin
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Magnetic Characterization

Magnetic characterization of epitaxial Y5FeeO12/Bi3Fe5O12and Y5Fe3O12/Eu1Bi2Fe5O12heterostructures grown by pulsed laser deposition

1994 ◽  
Vol 76 (10) ◽  
pp. 6287-6289 ◽  
Author(s):  
B. M. Simion ◽  
R. Ramesh ◽  
V. G. Keramidas ◽  
G. Thomas ◽  
E. Marinero ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Magnetic Characterization

Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition

2006 ◽  
Vol 89 (18) ◽  
pp. 182906 ◽  
Author(s):  
Sang-A Lee ◽  
Jae-Yeol Hwang ◽  
Jong-Pil Kim ◽  
Se-Young Jeong ◽  
Chae-Ryong Cho
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dielectric Characterization ◽  
Ga2o3 Thin Film

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Preparation and Characterization of BiFeO3 Thin Film Deposited on ITO Substrate by Using Pulsed Laser Deposition

2011 ◽  
Vol 59 (3(1)) ◽  
pp. 2537-2541 ◽  
Author(s):  
Jungmin Park ◽  
Fumiya Gotoda ◽  
Seiji Nakashima ◽  
Takeshi Kanashima ◽  
Masanori Okuyama
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Bifeo3 Thin Film

Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film

2008 ◽  
pp. 308-311
Author(s):  
F.K. Shan ◽  
G.X. Liu ◽  
Byoung Chul Shin ◽  
Won Jae Lee ◽  
W.T. Oh
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Surface and texture characterization of thin-film ZnTe formed with pulsed-laser deposition

2006 ◽  
Vol 24 (4) ◽  
pp. 1623-1626 ◽  
Author(s):  
Artur Erlacher ◽  
Alejandra R. Lukaszew ◽  
Herbert Jaeger ◽  
Bruno Ullrich
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Texture Characterization
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