Influence of plasma composition on reflectance anisotropy spectra for in situ III–V semiconductor dry-etch monitoring

2015 ◽  
Vol 357 ◽  
pp. 530-538 ◽  
Author(s):  
Lars Barzen ◽  
Ann-Kathrin Kleinschmidt ◽  
Johannes Strassner ◽  
Christoph Doering ◽  
Henning Fouckhardt ◽  
...  
Keyword(s):  
Plasma Composition ◽  
Reflectance Anisotropy ◽  
Dry Etch ◽  
Anisotropy Spectra

scholarly journals Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

2016 ◽  
Vol 7 ◽  
pp. 1783-1793 ◽  
Author(s):  
Ann-Kathrin Kleinschmidt ◽  
Lars Barzen ◽  
Johannes Strassner ◽  
Christoph Doering ◽  
Henning Fouckhardt ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Device Fabrication ◽  
Etch Depth ◽  
Reflectance Anisotropy ◽  
Depth Control ◽  
Dry Etch ◽  
First Time ◽  
Secondary Ion

Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL) is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

An algorithm for the in situ analysis of optical reflectance anisotropy spectra

2019 ◽  
Vol 515 ◽  
pp. 9-15
Author(s):  
J. Ortega-Gallegos ◽  
A. Lastras-Martínez ◽  
L.E. Guevara-Macías ◽  
J.G. Santiago García ◽  
D. Ariza-Flores ◽  
...  
Keyword(s):  
In Situ Analysis ◽  
Optical Reflectance ◽  
Reflectance Anisotropy ◽  
Anisotropy Spectra

scholarly journals 1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Henning Fouckhardt ◽  
Johannes Strassner ◽  
Thomas H. Loeber ◽  
Christoph Doering
Keyword(s):  
Gaas Substrate ◽  
Semiconductor Quantum Dots ◽  
Ex Situ ◽  
Difference Spectroscopy ◽  
Wetting Layer ◽  
Reflectance Anisotropy ◽  
Atomic Force ◽  
Monitoring Technique ◽  
Scientific Dispute

III/V semiconductor quantum dots (QD) are in the focus of optoelectronics research for about 25 years now. Most of the work has been done on InAs QD on GaAs substrate. But, e.g., Ga(As)Sb (antimonide) QD on GaAs substrate/buffer have also gained attention for the last 12 years. There is a scientific dispute on whether there is a wetting layer before antimonide QD formation, as commonly expected for Stransky-Krastanov growth, or not. Usually ex situ photoluminescence (PL) and atomic force microscope (AFM) measurements are performed to resolve similar issues. In this contribution, we show that reflectance anisotropy/difference spectroscopy (RAS/RDS) can be used for the same purpose as an in situ, real-time monitoring technique. It can be employed not only to identify QD growth via a distinct RAS spectrum, but also to get information on the existence of a wetting layer and its thickness. The data suggest that for antimonide QD growth the wetting layer has a thickness of 1 ML (one monolayer) only.

Defect Penetration During the Plasma Etching of Semiconductors

1992 ◽  
Vol 279 ◽  
Author(s):  
M. Rahman ◽  
M. A. Foad ◽  
S. Hicks ◽  
M. C. Holland ◽  
C. D. W. Wilkinson
Keyword(s):  
Plasma Etching ◽  
Surface Defect ◽  
Source Function ◽  
Complex Form ◽  
Simple Diffusion ◽  
Channeling Effect ◽  
Observed Damage ◽  
Dry Etch

ABSTRACTDry etching can introduce defects into the material being etched. Simple expressions for both sidewall and top surface defect distributions may be obtained by assuming that the defects are introduced according to a phenomenological source function. Calculations of conductance based on these expressions are found to describe very well measurements on dry-etched wires and epilayers. Mechanisms by which defects can penetrate into the sample are discussed. The role of sample heating and defect diffusion is examined. In-situ measurements of sample temperature during a dry-etch run indicate that simple diffusion is insufficient to account entirely for the observed damage. Instead, dry-etch damage may arise from other mechanisms such as by knock-on replacement collisions, or via a channeling effect. A more complex form of diffusion may also affect the final damage distribution.

Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces

1999 ◽  
Vol 59 (3) ◽  
pp. 2234-2239 ◽  
Author(s):  
W. G. Schmidt ◽  
E. L. Briggs ◽  
J. Bernholc ◽  
F. Bechstedt
Keyword(s):  
Reflectance Anisotropy ◽  
Anisotropy Spectra

Atomic layer sensitive in-situ plasma etch depth control with reflectance anisotropy spectroscopy (RAS)

2017 ◽  
Author(s):  
Christoph Doering ◽  
Ann-Kathrin Kleinschmidt ◽  
Lars Barzen ◽  
Johannes Strassner ◽  
Henning Fouckhardt
Keyword(s):  
Atomic Layer ◽  
Etch Depth ◽  
Plasma Etch ◽  
Reflectance Anisotropy ◽  
Depth Control
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