Shallow junction characteristics due to low temperature BGe molecular ion implantation into silicon

Shallow junction formation by decaborane molecular ion implantation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591245 ◽

2000 ◽

Vol 18 (1) ◽

pp. 445 ◽

Cited By ~ 11

Author(s):

Majeed A. Foad ◽

Roger Webb ◽

Roger Smith ◽

Jiro Matsuo ◽

Amir Al-Bayati ◽

...

Keyword(s):

Ion Implantation ◽

Molecular Ion ◽

Shallow Junction ◽

Junction Formation

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Post-annealing effects on shallow-junction characteristics caused by 20keV BGe molecular ion implantation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2005.05.007 ◽

2005 ◽

Vol 237 (1-2) ◽

pp. 312-317 ◽

Cited By ~ 3

Author(s):

J.H. Liang ◽

Y.J. Sang ◽

C.-H. Wang ◽

T.W. Wang ◽

J.Y. Hsu ◽

...

Keyword(s):

Ion Implantation ◽

Molecular Ion ◽

Shallow Junction ◽

Post Annealing ◽

Annealing Effects

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Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2007.03.067 ◽

2007 ◽

Vol 261 (1-2) ◽

pp. 651-655 ◽

Cited By ~ 2

Author(s):

J.H. Liang ◽

S.C. Wang

Keyword(s):

Low Temperature ◽

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Ion ◽

Depth Profiles ◽

Residual Damage

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Two-step post-annealing effects on the shallow-junction characteristics produced by BGe molecular ion implantation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2006.04.025 ◽

2006 ◽

Vol 249 (1-2) ◽

pp. 347-351 ◽

Cited By ~ 2

Author(s):

J.H. Liang ◽

Y.J. Sang

Keyword(s):

Ion Implantation ◽

Molecular Ion ◽

Shallow Junction ◽

Post Annealing ◽

Annealing Effects

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N/sup +//p ultra-shallow junction with low energy bismuth ion-implantation at low temperature

Extended Abstracts of the Fifth International Workshop on Junction Technology ◽

10.1109/iwjt.2005.203874 ◽

2005 ◽

Author(s):

Dongkyu Lee ◽

Sungkweon Back ◽

Shahram Ghanad Tavakoli ◽

Sungho Heo ◽

Hyunsang Hwang

Keyword(s):

Low Temperature ◽

Ion Implantation ◽

Low Energy ◽

Shallow Junction

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Characterization of damage behavior induced by low-temperature BGe molecular ion implantation in silicon

Vacuum ◽

10.1016/j.vacuum.2011.11.018 ◽

2013 ◽

Vol 89 ◽

pp. 86-89 ◽

Cited By ~ 1

Author(s):

J.H. Liang ◽

C.H. Wu

Keyword(s):

Low Temperature ◽

Ion Implantation ◽

Damage Behavior ◽

Molecular Ion

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Damage characteristics of low-temperature BSi molecular ion implantation in silicon

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2007.01.002 ◽

2007 ◽

Vol 257 (1-2) ◽

pp. 190-194 ◽

Cited By ~ 5

Author(s):

J.H. Liang ◽

S.C. Wang

Keyword(s):

Low Temperature ◽

Ion Implantation ◽

Molecular Ion ◽

Damage Characteristics

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Low Temperature Graphene Film Formation with Ethane Cluster Ion Implantation

2016 21st International Conference on Ion Implantation Technology (IIT) ◽

10.1109/iit.2016.7882889 ◽

2016 ◽

Author(s):

Noriaki Toyoda ◽

Isao Yamada

Keyword(s):

Low Temperature ◽

Ion Implantation ◽

Film Formation ◽

Graphene Film ◽

Cluster Ion

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Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film

Electronics Letters ◽

10.1049/el:19981653 ◽

1998 ◽

Vol 34 (25) ◽

pp. 2436

Author(s):

T. Oishi ◽

A. Furukawa ◽

K. Shiozawa ◽

Y. Abe ◽

Y. Tokuda

Keyword(s):

Oxide Film ◽

Ion Implantation ◽

High Performance ◽

Shallow Junction ◽

Thin Oxide Film ◽

Junction Formation ◽

Thin Oxide ◽

Length Reduction

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Amorphous Fe-B alloys produced by ion implantation. II. Low-temperature radiation damage

Journal of Physics F Metal Physics ◽

10.1088/0305-4608/15/6/010 ◽

1985 ◽

Vol 15 (6) ◽

pp. 1237-1247 ◽

Cited By ~ 10

Author(s):

A Audouard ◽

A Benyagoub ◽

L Thome ◽

J Chaumont

Keyword(s):

Low Temperature ◽

Ion Implantation ◽

Radiation Damage ◽

Temperature Radiation

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