Recovery of clean ordered (111) surface of etched silicon

2013 ◽  
Vol 282 ◽  
pp. 156-160 ◽  
Author(s):  
A.M.C. Ng ◽  
L. Dong ◽  
W.K. Ho ◽  
A.B. Djurišić ◽  
M.H. Xie ◽  
...  
Keyword(s):  
Etched Silicon

Sputter‐etched Silicon Carbide by AES

1994 ◽  
Vol 3 (3) ◽  
pp. 182-186
Author(s):  
June M. Epp
Keyword(s):  
Silicon Carbide ◽  
Etched Silicon

Parallel fabrication on chemically etched silicon using scanning tunneling microscopy

1992 ◽  
Vol 42-44 ◽  
pp. 1303-1308 ◽  
Author(s):  
X. Zheng ◽  
J. Hetrick ◽  
S.-T. Yau ◽  
M.H. Nayfeh
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Etched Silicon

Micropattern Effect on Breast Cancer Cells Behavior on Isotropically Etched Silicon Microenvironments

2010 ◽  
Author(s):  
Mehdi Nikkhah ◽  
Jeannine S. Strobl ◽  
Bhanu Peddi ◽  
Adedamola Omotosho ◽  
Masoud Agah
Keyword(s):  
Breast Cancer ◽  
Cancer Cells ◽  
Three Dimensional ◽  
Cancer Diagnostics ◽  
Breast Cancer Diagnostics ◽  
Wide Range ◽  
Etched Silicon ◽  
Directed Motility ◽  
Etched Surface ◽  
Silicon Based

In this paper we are investigating three dimensional (3-D) silicon-based microenvironments as potential platforms for breast cancer diagnostics. We have developed isotropically etched microstructures with a wide range of geometrical patterns for this purpose. Our results indicate that with the etched surface ratio of ∼65%, it is possible to capture 80–90% of the cancer cells within each silicon chip. After treatment of the cells with mitomycin C (to block the cell growth) more number of the cells are trapped inside the etched features for longer cultures times (72 h) suggesting that there is a directed motility and attraction of the cells toward the etched cavities and by optimally designing the etched features, the proposed platforms can be potentially used for diagnostics purposes.

Enhanced Boiling on Microconfigured Surfaces

1989 ◽  
Vol 111 (2) ◽  
pp. 112-120 ◽  
Author(s):  
N. Wright ◽  
B. Gebhart
Keyword(s):  
Heat Transfer ◽  
Pool Boiling ◽  
Electrical Potential ◽  
Silicon Surfaces ◽  
Electrical Heating ◽  
Experimental Procedure ◽  
Saturated Water ◽  
Etched Silicon ◽  
Convection Correlation ◽  
Enhanced Boiling

New results are presented for pool boiling from vertical, smooth and regularly microconfigured etched silicon surfaces, in saturated water at 1 atm. All specimens were 1.27 cm square and approximately 300 μm thick. The etched microstructures were hexagonal dimples and rectangular trenches. The dimples were 4.1 μm deep and 11.5 μm across, on 22 μm centers. The trenches were 51 μm deep, 12.6 μm wide and 101 μm long, with repeat distances of 22 and 110 μm, in the two directions. The surface densities of the microstructures were 2 × 105 per cm2 for the dimples and 0.4 × 105 per cm2 for the trenches. Electrical heating was accomplished by applying an electrical potential across the phosphorous doped dry side of the silicon specimen substrate. The hexagonally dimpled specimen in the nominal nucleate pool boiling region had heat transfer increased by a factor of 4.2 over that of the smooth specimens. The heat transfer enhancement was a factor of 3.1 over the smooth specimen data, for the trenched specimen data. In the nominally convective-vaporization regime, both the smooth and microconfigured specimens had as much as 5 times the heat transfer compared to a uniform flux natural convection correlation. Comparable heat transfer measurements in subcooled water verified the experimental procedure and also indicated that only a small fraction of this large enhancement may be explained by edge effects, on these small heaters.

Auger electron spectroscopy study of reactive ion etched silicon carbide

2006 ◽  
Vol 83 (1) ◽  
pp. 12-16 ◽  
Author(s):  
J.H. Xia ◽  
Rusli ◽  
S.F. Choy ◽  
R. Gopalakrishan ◽  
C.C. Tin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Spectroscopy Study ◽  
Etched Silicon

Optical Studies of porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
T. Lin ◽  
M. E. Sixta ◽  
J. N. Cox ◽  
M. E. Delaney
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Steady State ◽  
Porous Silicon ◽  
Ftir Spectroscopy ◽  
Optical Studies ◽  
Etched Silicon ◽  
Bending Modes ◽  
P Type ◽  
Over Time

AbstractThe optical properties of both electrochemically anodized and chemically stain-etched porous silicon are presented. Fourier transform infrared (FTIR) spectroscopy showed that absorbance in stain-etched samples was 3x and 1.7x greater than in anodized samples for the SiH/SiH2 stretch and scissors-bending modes, respectively. Also, oxygen is detected in stain-etched samples immediately after formation, unlike anodized samples. Photoluminescence measurements showed different steady state characteristics. Electrochemical-etched silicon samples stored in air increased in photoluminescent intensity over time, unlike the stain-etched samples. A photoluminescent device made by anodization on epitaxial p-type material (0.4 Ωm) on n-type substrate (0.1 Ω-cm) did not exhibit electroluminescence.

Wet Etched Silicon Interposer for the 2.5D Stacking of CMOS and Optoelectronic Dies

2016 ◽  
Author(s):  
Chenhui Li ◽  
Barry Smalbrugge ◽  
Tjibbe de Vries ◽  
Ripalta Stabile ◽  
Oded Raz
Keyword(s):  
Etched Silicon
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