Lattice distortion and strain relaxation in epitaxial thin films of multiferroic TbMnO3 probed by X-ray diffractometry and micro-Raman spectroscopy

2013 ◽  
Vol 278 ◽  
pp. 92-95 ◽  
Author(s):  
Y. Hu ◽  
D. Stender ◽  
M. Medarde ◽  
T. Lippert ◽  
A. Wokaun ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Lattice Distortion ◽  
Strain Relaxation ◽  
Epitaxial Thin Films ◽  
X Ray ◽  
Micro Raman Spectroscopy

Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films

2005 ◽  
Vol 40 (16) ◽  
pp. 4293-4298 ◽  
Author(s):  
S. N. Tkachev ◽  
M. H. Manghnani ◽  
A. Niilisk ◽  
J. Aarik ◽  
H. Mändar
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Micro Raman Spectroscopy

PREFERENTIAL ORIENTATION GROWTH OF AlN THIN FILMS ON Si(111) SUBSTRATES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

2009 ◽  
Vol 16 (06) ◽  
pp. 925-928 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Raman Modes ◽  
Orientation Growth ◽  
Good Agreement

This article reports the use of plasma-assisted molecular beam epitaxy (MBE) to grow AlN on Si (111) substrate at 850°C under UHV conditions for 15, 30, and 45 min. The films were characterized by high-resolution X-ray diffraction (HR-XRD) and micro-Raman spectroscopy. XRD measurement revealed that the AlN was epitaxially grown on Si (111). Micro-Raman result showed that all the allowed Raman modes of AlN and Si were clearly visible. Fourier transform infrared (FTIR) spectroscopy has been used to investigate the A1 (LO) and E1 (TO) modes with frequencies (890–899) cm-1 and (668–688) cm-1, respectively. The results are in good agreement with reported phonon frequencies of AlN grown on Si (111).

The Structural Characteristics of CIS Thin Films Prepared by Electro-Deposited Method

2013 ◽  
Vol 818 ◽  
pp. 88-91
Author(s):  
Kun Liu ◽  
Ji Sheng Yang ◽  
Rui Li ◽  
Wei Peng ◽  
Shi Pan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
Electro Deposition ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Deposition Technology

The properties of the absorber layer of solar cell CuInSe2(CIS) thin film made by electro-depostied method were researched in this article. Different concentration of reactant and voltage was applied to prepare the CIS film. The micro-Raman spectroscopy and X-ray diffraction (XRD) of CIS film was carried out. A correlation between the linewidth A1 mode of Raman spectrum and the XRD line and the voltage of electro-deposition technology was found.

Fabrication,Transport and Raman Studies of Pulsed Laser Deposited Al/Ga Doped PBCO Thin Films

2009 ◽  
Vol 1222 ◽  
Author(s):  
Hom R Kandel ◽  
Tar-Pin Chen ◽  
Hye-Won Seo ◽  
Milko Iliev ◽  
Paritosh Wadekar ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Second Phases ◽  
Krf Excimer Laser

AbstractWe have fabricated highly resistive materials PrBa2 (Cu1-xMx) 3O7 (M=Al, Ga, x = 0.20) by doping metals Ga and Al on PrBa2Cu3O7(PBCO). X-ray data indicated no significant second phases in substituting Cu by Al or Ga up to 20%.The electrical resistivity of these materials were three to four orders in magnitude higher than PBCO at 200K, which may give an effective potential barrier to YBCO in high Tc S-I-S Josephson junction. Epitaxial thin films of these materials were grown using KrF excimer laser on LAO (110) single crystal substrates. X-ray diffraction (XRD) and atomic force microscopy (AFM) were deployed to study the crystal orientation, epitaxy and roughness of the single crystal thin films. Micro Raman spectroscopy was carried out to investigate the dopant site in PBCO.

Formation of the YBa2Cu2NbOy phase in thin films

2009 ◽  
Vol 24 (1) ◽  
pp. 212-216
Author(s):  
Srinivas Sathiraju ◽  
Paul N. Barnes ◽  
Robert A. Wheeler
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
New Phase

We report the systematic substitution of Nb at the Cu1 site of YBa2Cu3Oy in thin films to form a new phase of YBa2Cu2NbO8. These films were deposited on SrTiO3(100) crystals using pulsed laser deposition and deposited at an optimal temperature of 850 °C. Films were characterized using x-ray diffraction (XRD), atomic force microscopy, x-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, and transmission electron microscopy. XRD of these films indicate c-axis oriented YBa2Cu2NbOy formation. XPS and micro-Raman spectroscopy analysis suggests Cu exists in the +2 state.

scholarly journals Use of WetSEM® capsules for convenient multimodal scanning electron microscopy, energy dispersive X-ray analysis, and micro Raman spectroscopy characterisation of technetium oxides

2021 ◽  
Author(s):  
D. J. Bailey ◽  
M. C. Stennett ◽  
J. Heo ◽  
N. C. Hyatt
Keyword(s):  
Raman Spectroscopy ◽  
Low Cost ◽  
Powder Materials ◽  
Spectroscopy Analysis ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Hazard And Risk ◽  
Sem Imaging ◽  
General User ◽  
532 Nm

AbstractSEM–EDX and Raman spectroscopy analysis of radioactive compounds is often restricted to dedicated instrumentation, within radiological working areas, to manage the hazard and risk of contamination. Here, we demonstrate application of WetSEM® capsules for containment of technetium powder materials, enabling routine multimodal characterisation with general user instrumentation, outside of a controlled radiological working area. The electron transparent membrane of WetSEM® capsules enables SEM imaging of submicron non-conducting technetium powders and acquisition of Tc Lα X-ray emission, using a low cost desktop SEM–EDX system, as well as acquisition of good quality μ-Raman spectra using a 532 nm laser.

Electric-field-induced lattice distortion in epitaxial BiFeO3 thin films as determined by in situ time-resolved x-ray diffraction

2017 ◽  
Vol 111 (8) ◽  
pp. 082907 ◽  
Author(s):  
Seiji Nakashima ◽  
Osami Sakata ◽  
Hiroshi Funakubo ◽  
Takao Shimizu ◽  
Daichi Ichinose ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Lattice Distortion ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Bifeo3 Thin Films
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