Influence of the sputtering reactive gas on the oxide and oxynitride LaTiON deposition by RF magnetron sputtering

2013 ◽  
Vol 264 ◽  
pp. 533-537 ◽  
Author(s):  
Y. Lu ◽  
C. Le Paven-Thivet ◽  
R. Benzerga ◽  
L. Le Gendre ◽  
A. Sharaiha ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Reactive Gas

Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering

2016 ◽  
Vol 306 ◽  
pp. 346-350 ◽  
Author(s):  
N. Khemasiri ◽  
S. Jessadaluk ◽  
C. Chananonnawathorn ◽  
S. Vuttivong ◽  
T. Lertvanithphol ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Tantalum Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Band Engineering ◽  
Reactive Gas

Spectroscopic study on amorphous tantalum oxynitride thin films prepared by reactive gas-timing RF magnetron sputtering

2019 ◽  
Vol 492 ◽  
pp. 99-107 ◽  
Author(s):  
T. Lertvanithphol ◽  
W. Rakreungdet ◽  
C. Chananonnawathorn ◽  
P. Eiamchai ◽  
S. Limwichean ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Spectroscopic Study ◽  
Rf Magnetron Sputtering ◽  
Reactive Gas

scholarly journals Tailoring Properties of Hafnium Nitride Thin Film via Reactive Gas-Timing RF Magnetron Sputtering for Surface Enhanced-Raman Scattering Substrates

Crystals ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 78
Author(s):  
Nguentra Sucheewa ◽  
Winadda Wongwiriyapan ◽  
Annop Klamchuen ◽  
Michiko Obata ◽  
Masatsugu Fujishige ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Sers Substrate ◽  
Hafnium Nitride ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Reactive Gas

This study successfully demonstrated the tailoring properties of hafnium nitride (HfN) thin films via reactive gas-timing (RGT) RF magnetron sputtering for surface-enhanced Raman spectroscopy (SERS) substrate applications. The optimal RGT sputtering condition was investigated by varying the duration time of the argon and nitrogen gas sequence. The RGT technique formed thin films with a grain size of approximately 15 nm. Additionally, the atomic ratios of nitrogen and hafnium can be controlled between 0.24 and 0.28, which is greater than the conventional technique, resulting in a high absorbance in the long wavelength region. Moreover, the HfN thin film exhibited a high Raman signal intensity with an EF of 8.5 × 104 to methylene blue molecules and was capable of being reused five times. A superior performance of HfN as a SERS substrate can be attributed to its tailored grain size and chemical composition, which results in an increase in the hot spot effect. These results demonstrate that the RGT technique is a viable method for fabricating HfN thin films with controlled properties at room temperature, which makes them an attractive material for SERS and other plasmonic applications.

Effects of Deposition Parameters on the Crystallinities of CeO2 and Y2O3 Buffer Layers on Textured Ni Deposited by Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 779-782
Author(s):  
Yong Jun Oh ◽  
Jung Seok Ra ◽  
Ui Gil Lee
Keyword(s):  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Single Layer ◽  
Rf Magnetron Sputtering ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Process Conditions ◽  
Deposition Parameters ◽  
Doped Ceo2 ◽  
Reactive Gas

The epitaxial growth conditions of CeO2 and Y2O3 single buffer layers on textured Ni tapes were examined using rf magnetron sputtering, and the process conditions for the sequential and mixture buffer layers of these two materials were investigated respectively in order to develop a more simplified buffer architecture. The CeO2 single layer exhibited a well developed (200) epitaxial growth at Ar/10%O2 gas below 450°C, although the epitaxial property was decreased with increasing layer thickness. With regard to the deposition of Y2O3 on Ni, the epitaxial growth was not successful. The epitaxy of Y2O3 on Ni was very sensitive to the O2 gas pressure during sputtering. The repeated sequential architecture of the CeO2 and Y2O3 layers exhibited a good epitaxial property at 400°C/(Ar/10%O2) for the initial CeO2 layer and 700°C/Ar and 700°C/(Ar/10%O2) for the subsequent Y2O3 and CeO2 layers, respectively. The Y-doped CeO2 buffers with (200) epitaxy were successfully obtained by the co-sputtering of Ce and Y metals in a reactive gas condition, and the maximum target Y/Ce ratio for the epitaxy was about 1/10.

Chemical Characterization and Electrical Properties of Indium Oxynitride Grown by Reactive Gas-Timing RF Magnetron Sputtering

2010 ◽  
Vol 93-94 ◽  
pp. 443-446 ◽  
Author(s):  
A. Sungthong ◽  
P. Khomdet ◽  
S. Porntheeraphat ◽  
C. Hruanun ◽  
Amporn Poyai ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Mobility ◽  
Auger Electron ◽  
Chemical Characterization ◽  
Rf Magnetron Sputtering ◽  
Optical Phonons ◽  
Reactive Gas

This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O2:N2 timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E1(TO) at ~470 cm-1 and E1(LO) at ~570 cm-1 and also shifted with different O2:N2 timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O2:N2 timing is increased.

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