Substrate surface polariton splitting due to thin zinc oxide and aluminum nitride films presence

2013 ◽  
Vol 267 ◽  
pp. 93-96 ◽  
Author(s):  
N.N. Novikova ◽  
V.A. Yakovlev ◽  
E.A. Vinogradov ◽  
S.S. Ng ◽  
Z. Hassan ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Aluminum Nitride ◽  
Substrate Surface ◽  
Surface Polariton

scholarly journals Sapphire surface polariton splitting due to resonance with aluminum nitride film phonon

2010 ◽  
Vol 210 ◽  
pp. 012027 ◽  
Author(s):  
V A Yakovlev ◽  
N N Novikova ◽  
E A Vinogradov ◽  
S S Ng ◽  
Z Hassan ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Nitride Film ◽  
Surface Polariton ◽  
Sapphire Surface

scholarly journals The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers

2013 ◽  
Vol 113 (21) ◽  
pp. 213502 ◽  
Author(s):  
Zonghui Su ◽  
Justin P. Freedman ◽  
Jacob H. Leach ◽  
Edward A. Preble ◽  
Robert F. Davis ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Aluminum Nitride ◽  
Film Thickness ◽  
Thermal Resistance ◽  
Substrate Surface ◽  
Substrate Surface Roughness ◽  
The Impact

Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering on Mylar Substrates at Room Temperature

2001 ◽  
Vol 685 ◽  
Author(s):  
Elvira Fortunato ◽  
Patrícia Nunes ◽  
António Marques ◽  
Daniel Costa ◽  
Hugo Águas ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Low Cost ◽  
Substrate Surface ◽  
Hexagonal Wurtzite Structure ◽  
Oxide Thin Films ◽  
Large Area ◽  
Axis Orientation

AbstractAluminium doped zinc oxide thin films (ZnO:Al) have been deposited on polyester (Mylar type D, 100 μm thickness) substrates at room temperature by r.f. magnetron sputtering. The structural, morphological, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular to the substrate surface. The ZnO:Al thin films with 85% transmittance in the visible and infra-red region and a resistivity as low as 3.6×10−2 ωcm have been obtained, as deposited. The obtained results are comparable to those ones obtained on glass substrates, opening a new field of low cost, light weight, small volume, flexible and unbreakable large area optoelectronic devices.

Surface Modification of Aluminum Nitride and of Aluminum by Excimer Laser

1992 ◽  
Vol 285 ◽  
Author(s):  
A.J. Pedraza ◽  
J.-Y. Zhang ◽  
H. Esrom
Keyword(s):  
Aluminum Nitride ◽  
Excimer Laser ◽  
Substrate Surface ◽  
Ablation Rate ◽  
Laser Wavelength ◽  
Mechanism Of Decomposition ◽  
Self Consistent ◽  
A New Technique ◽  
193 Nm ◽  
Evaporation Kinetics

ABSTRACTA new technique for selective metallization of aluminum nitride (AIN) has been previously reported (1). It involves the use of an excimer laser to activate the AIN surface followed by electroless plating (Cu,Ni,Au) of the irradiated areas. The mechanism of decomposition of ALN is accompanied by ablation and the formation of an Al film on the substrate surface. Ablation rates are reported here as a function of fluence and number of pulses for three different wavelengths λ = 193 nm (ArF), λ = 248 (KrF) and λ = 351 nm (XeF).The effect of laser wavelength on the ablation rate is discussed. The ablation rates for Al were zlso measured and are compared with the AIN ablation rates. A numerical thermal model is used to analyze the mechanisms of laser ablation of both materials. The evaporation kinetics are incorporated into the model. The Clausius-Clapeyron approximation is used to make a self-consistent calculation of boiling and decomposition temperatures.

Strong coupling of sapphire surface polariton with aluminum nitride film phonon

2009 ◽  
Vol 373 (27-28) ◽  
pp. 2382-2384 ◽  
Author(s):  
V.A. Yakovlev ◽  
N.N. Novikova ◽  
E.A. Vinogradov ◽  
S.S. Ng ◽  
Z. Hassan ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Strong Coupling ◽  
Nitride Film ◽  
Surface Polariton ◽  
Sapphire Surface
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