Effects of incident cluster size, substrate temperature, and incident energy on bombardment of Ni clusters onto Cu (001) surface studied using molecular dynamics simulation

2012 ◽  
Vol 258 (15) ◽  
pp. 5892-5897 ◽  
Author(s):  
Shiang-Jiun Lin ◽  
Cheng-Da Wu ◽  
Te-Hua Fang ◽  
Guan-Hung Chen
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Substrate Temperature ◽  
Cluster Size ◽  
Incident Energy ◽  
Dynamics Simulation ◽  
Ni Clusters

scholarly journals A Study on Sputtering of Copper Seed Layer for Interconnect Metallization via Molecular Dynamics Simulation

2021 ◽  
Vol 11 (20) ◽  
pp. 9702
Author(s):  
Cheng-Hsuan Ho ◽  
Cha’o-Kuang Chen ◽  
Chieh-Li Chen
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Process Parameters ◽  
Seed Layer ◽  
Incident Energy ◽  
Incident Angle ◽  
Dynamics Simulation ◽  
Copper Seed Layer

Interconnects are significant elements in integrated circuits (ICs), as they connect individual components of the circuit into a functioning whole. To form a void-free interconnect, a thin and uniform copper seed layer must be deposited as a basis for electroplating. In this paper, process parameters of sputtering including incident energy, incident angle, substrate temperature, and deposition rate were studied to form a uniform copper seed layer. Different liner/barrier materials and properties including crystal planes were also studied to enhance the quality of the copper seed layer. The study was carried out by molecular dynamics simulation. It revealed that increasing the incident energy and substrate temperature during the sputtering process increases their diffusivity but results in poorer uniformity and larger alloy percentage. By decreasing the deposition rate, the Ostwald ripening effect becomes dominant and increases the uniformity. An adequate incident angle could increase necking and uniformity. Among the sputtering process parameters and material properties discussed in this study, surface diffusion barrier energy of different crystal planes is the most decisive factor, which leads to good uniformity.

GROWTH OF C36-FILMS ON DIAMOND SURFACE THROUGH MOLECULAR DYNAMICS SIMULATION

2002 ◽  
Vol 16 (26) ◽  
pp. 3971-3978 ◽  
Author(s):  
A. J. DU ◽  
Z. Y. PAN ◽  
Z. HUANG ◽  
Z. J. LI ◽  
Q. WEI ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Incident Energy ◽  
Three Dimensional ◽  
Building Blocks ◽  
Dynamics Simulation ◽  
Diamond Surface ◽  
Initial Stage ◽  
Optimum Energy ◽  
The Impact

In this paper, the initial stage of films assembled by energetic C 36 fullerenes on diamond (001)–(2 × 1) surface at low-temperature was investigated by molecular dynamics simulation using the Brenner potential. The incident energy was first uniformly distributed within an energy interval 20–50 eV, which was known to be the optimum energy range for chemisorption of single C 36 on diamond (001) surface. More than one hundred C 36 cages were impacted one after the other onto the diamond surface by randomly selecting their orientation as well as the impact position relative to the surface. The growth of films was found to be in three-dimensional island mode, where the deposited C 36 acted as building blocks. The study of film morphology shows that it retains the structure of a free C 36 cage, which is consistent with Low Energy Cluster Beam Deposition (LECBD) experiments. The adlayer is composed of many C 36-monomers as well as the covalently bonded C 36 dimers and trimers which is quite different from that of C 20 fullerene-assembled film, where a big polymerlike chain was observed due to the stronger interaction between C 20 cages. In addition, the chemisorption probability of C 36 fullerenes is decreased with increasing coverage because the interaction between these clusters is weaker than that between the cluster and the surface. When the incident energy is increased to 40–65 eV, the chemisorption probability is found to increased and more dimers and trimers as well as polymerlike- C 36 were observed on the deposited films. Furthermore, C 36 film also showed high thermal stability even when the temperature was raised to 1500 K.

MOLECULAR-DYNAMICS SIMULATION OF SURFACE SPUTTERING BY ENERGETIC RARE-GAS CLUSTER IMPACT

1996 ◽  
Vol 03 (01) ◽  
pp. 1023-1027 ◽  
Author(s):  
Z. INSEPOV ◽  
I. YAMADA
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Cluster Size ◽  
Silicon Surfaces ◽  
Dynamics Simulation ◽  
Cluster Ions ◽  
Rare Gas ◽  
Cluster Energy ◽  
Small Clusters ◽  
Surface Sputtering

The molecular-dynamics simulation is used for simulation of sputtering of gold and silicon surfaces by accelerated [Formula: see text] cluster ions with n~55–200 and energies of 10–100 eV per cluster atom. The sputtering yield Y can be described by a power dependency Y ∝E2.35 on the total cluster energy. The result of the calculation agrees with the experimental data point at the energy of 29 keV and cluster size of 300 Ar atoms. The simulation shows that the sputtered flux has a significant lateral-momentum component and the sputtered surface materials contain not only atoms but also small clusters.

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