Growth of beryllium thin films on beryllium (0001) surface: Influence of incident energy and incident angle by molecular dynamics simulation

2018 ◽  
Vol 124 (17) ◽  
pp. 175304 ◽  
Author(s):  
Xuegang Zhu ◽  
Yuping Lu
2021 ◽  
Vol 11 (20) ◽  
pp. 9702
Author(s):  
Cheng-Hsuan Ho ◽  
Cha’o-Kuang Chen ◽  
Chieh-Li Chen

Interconnects are significant elements in integrated circuits (ICs), as they connect individual components of the circuit into a functioning whole. To form a void-free interconnect, a thin and uniform copper seed layer must be deposited as a basis for electroplating. In this paper, process parameters of sputtering including incident energy, incident angle, substrate temperature, and deposition rate were studied to form a uniform copper seed layer. Different liner/barrier materials and properties including crystal planes were also studied to enhance the quality of the copper seed layer. The study was carried out by molecular dynamics simulation. It revealed that increasing the incident energy and substrate temperature during the sputtering process increases their diffusivity but results in poorer uniformity and larger alloy percentage. By decreasing the deposition rate, the Ostwald ripening effect becomes dominant and increases the uniformity. An adequate incident angle could increase necking and uniformity. Among the sputtering process parameters and material properties discussed in this study, surface diffusion barrier energy of different crystal planes is the most decisive factor, which leads to good uniformity.


2018 ◽  
Vol 4 (4) ◽  
Author(s):  
Qiang Zhao ◽  
Yang Li ◽  
Zheng Zhang ◽  
Xiaoping Ouyang

The sputtering of graphite due to the bombardment of hydrogen isotopes is crucial to successfully using graphite in the fusion environment. In this work, we use molecular dynamics to simulate the sputtering using the large-scale atomic/molecular massively parallel simulator (lammps). The calculation results show that the peak values of the sputtering yield are between 25 eV and 50 eV. When the incident energy is greater than the energy corresponding to the peak value, a lower carbon sputtering yield is obtained. The temperature that is most likely to sputter is approximately 800 K for hydrogen, deuterium, and tritium. Below the 800 K, the sputtering yields increase with temperature. By contrast, above the 800 K, the yields decrease with increasing temperature. Under the same temperature and incident energy, the sputtering rate of tritium is greater than that of deuterium, which in turn is greater than that of hydrogen. When the incident energy is 25 eV, the sputtering yield at 300 K increases below an incident angle at 30 deg and remains steady after that.


2014 ◽  
Vol 513-517 ◽  
pp. 113-116
Author(s):  
Jen Ching Huang ◽  
Fu Jen Cheng ◽  
Chun Song Yang

The Youngs modulus of multilayered nanothin films is an important property. This paper focused to investigate the Youngs Modulus of Multilayered Ni/Cu Multilayered nanoThin Films under different condition by Molecular Dynamics Simulation. The NVT ensemble and COMPASS potential function were employed in the simulation. The multilayered nanothin film contained the Ni and Cu thin films in sequence. From simulation results, it is found that the Youngs modulus of Cu/Ni multilayered nanothin film is different at different lattice orientations, temperatures and strain rate. After experiments, it can be found that the Youngs modulus of multilayered nanothin film in the plane (100) is highest. As thickness of the thin film and system temperature rises, Youngs modulus of multilayered nanothin film is reduced instead. And, the strain rate increases, the Youngs modulus of Cu/Ni multilayered nanothin film will also increase.


Langmuir ◽  
2017 ◽  
Vol 33 (41) ◽  
pp. 11070-11076 ◽  
Author(s):  
Dipak Aryal ◽  
Anupriya Agrawal ◽  
Dvora Perahia ◽  
Gary S. Grest

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