Growth of single-walled carbon nanotubes from hot-implantation-formed catalytic Fe nanoparticles assisted by microwave plasma

2012 ◽  
Vol 258 (7) ◽  
pp. 2982-2988 ◽  
Author(s):  
Yasushi Hoshino ◽  
Hiroki Arima ◽  
Yasunao Saito ◽  
Jyoji Nakata
Carbon ◽  
2006 ◽  
Vol 44 (13) ◽  
pp. 2758-2763 ◽  
Author(s):  
Matthew R. Maschmann ◽  
Placidus B. Amama ◽  
Amit Goyal ◽  
Zafar Iqbal ◽  
Timothy S. Fisher

2004 ◽  
Vol 858 ◽  
Author(s):  
Matthew R. Maschmann ◽  
Amit Goyal ◽  
Zafar Iqbal ◽  
Timothy S. Fisher ◽  
Roy Gat

ABSTRACTSingle-walled carbon nanotubes (SWCNTs) have been grown for the first time by microwave plasma-enhanced chemical vapor deposition (PECVD) at 800°C using methane as the precursor and bimetallic Mo/Co catalyst supported on MgO dispersed on a silicon wafer. The nanotubes grown consist of bundles, each composed of individual tubes of a single diameter associated with either metallic or semiconducting SWCNTs, based on characterization by Raman spectroscopy. Field-emission scanning electron microscopy and atomic force microscopy show that the bundles are relatively thin – 5 to 10 nm in diameter – and up to a few micrometers in length. The results are compared with those obtained on recently reported SWCNTs grown by radio frequency PECVD.


Author(s):  
Matthew R. Maschmann ◽  
Placidus B. Amama ◽  
Timothy S. Fisher

The physical properties of carbon nanotubes (CNTs) make them outstanding candidates for introduction into technologies ranging from high resolution flat panel displays to nanoscale transistors. Integration of carbon nanotubes into devices, however, requires precise control over the manufacturing processes used during their synthesis. To meet the specific requirements of a given application, alignment, diameter, length and chirality of carbon nanotubes must be strictly addressed. This work demonstrates the controlled synthesis of single-walled carbon nanotubes (SWCNTs) with low amount of undesired carbonaceous species using plasma enhanced chemical vapor deposition (PECVD). This report elucidates the role of DC bias applied to the growth substrate during synthesis, including the field-enhanced alignment of SWCNTs, selectivity in the diameter distribution and selectivity of semiconducting versus metallic nanotubes. Carbon nanotubes are characterized using Raman spectroscopy and electron microscopy.


2007 ◽  
Vol 90 (17) ◽  
pp. 173127 ◽  
Author(s):  
Y. F. Li ◽  
R. Hatakeyama ◽  
J. Shishido ◽  
T. Kato ◽  
T. Kaneko

2013 ◽  
Vol 51 (2) ◽  
pp. 137-144
Author(s):  
Naesung Lee ◽  
Jeung Choon Goak ◽  
Tae Yang Kim ◽  
Jongwan Jung ◽  
Young-Soo Seo ◽  
...  

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