Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser

2011 ◽  
Vol 257 (6) ◽  
pp. 2303-2307 ◽  
Author(s):  
L. Liu ◽  
C.Y. Chang ◽  
Wenhsing Wu ◽  
S.J. Pearton ◽  
F. Ren
Keyword(s):  
Excimer Laser ◽  
Via Holes

Uv Excimer Laser Induced Prenucleation of Surfaces from Spin-on Films Followed by Electroless Metallization

1988 ◽  
Vol 131 ◽  
Author(s):  
Hilmar Esrom ◽  
Georg Wahl ◽  
Michael Stuke
Keyword(s):  
Excimer Laser ◽  
Electroless Plating ◽  
Laser Light ◽  
Palladium Acetate ◽  
Curved Surfaces ◽  
Surface Material ◽  
Contact Metallization ◽  
Electroless Metallization ◽  
Via Holes

ABSTRACTUV excimer laser light-induced prenucleation of various surfaces from spin-on films in air is described. Good results were obtained using palladium acetate on substrate materials ranging from ceramics to polymers and even paper. Virtually any surface material can be prenucleated in this way. The Pd-prenucleated planar and curved surfaces can be metallized by a vast variety of metals using electroless plating solutions (Cu, Ni, Au, Pt, Co, Sn, and even alloys). Results are described in detail for copper from a standard electroless solution (Doduco or Shipley). Contact metallization through via holes using this process was aachieved with excellent contact properties.

Removal of Plasma-Etch-Induced Polymers from Submicron Via Holes by Excimer Laser Ablation

1998 ◽  
Vol 526 ◽  
Author(s):  
Y. F. Lu ◽  
Y. P. Lee ◽  
M. S. Zhou
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Incident Angle ◽  
Damage Threshold ◽  
Ablation Rate ◽  
Laser Cleaning ◽  
Rate Data ◽  
Excimer Laser Ablation ◽  
Reflective Coating ◽  
Via Holes

AbstractA relatively new approach in removing the sidewall and bottom polymers resulting from reactive ion etching of via holes, using a non-contact dry excimer laser cleaning technique has been investigated. Pulsed excimer laser ablation at 248 nm has been found to be capable of removing the via-etch-induced polymers at fluences limited by the damage threshold of the underlying Al-Cu metal film with TiN anti-reflective coating of 250-280 mJ cm-2. A fluence window of 150-200 mJ cm-2 for efficient laser cleaning is also determined from the ablation rate data using the relation in the limit of Beer's law absorption. Experimental results have also shown that the ablation rate when irradiating at an angle is not only comparable to that at vertical incidence, but even register higher values for most of the ablation rate data obtained. An optimum incident angle for laser cleaning of 45° can be determined from the results.

Circular and Rectangular Via Holes Formed in SiC via Using ArF Based UV Excimer Laser

2019 ◽  
Vol 41 (6) ◽  
pp. 107-115 ◽  
Author(s):  
Lu Liu ◽  
C. Y. Chang ◽  
Wenhsing Wu ◽  
S. J. Pearton ◽  
F. Ren
Keyword(s):  
Excimer Laser ◽  
Via Holes

Plugging of Al Films Into Submicron Diameter Via Holes by Excimer Laser Irradiation

1986 ◽  
Vol 74 ◽  
Author(s):  
R. Mukai ◽  
N. Sasaki ◽  
M. Nakano
Keyword(s):  
Aspect Ratio ◽  
Integrated Circuits ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Aluminum Film ◽  
Hole Filling ◽  
Aluminum Films ◽  
Via Holes ◽  
Excimer Laser Irradiation ◽  
Via Hole

AbstractVia-hole filling technique by momentarily melting an aluminum film has been developed, whereby planarization of aluminum films for multilevel interconnects on integrated circuits can be achieved. The melting is performed with an optical pulse irradiation from an ArF excimer laser without the problem of junction spiking. This technique is applicable to filling submicron-diameter vias having a diameter of 0.6μm with 0.7μm depth(aspect ratio:∼1.2). Very high aspect ratio(2.0) via-hole filling is achieved by heating the sample. During the laser irradiation, the sample substrate was kept at 300°C.

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