Plugging of Al Films Into Submicron Diameter Via Holes by Excimer Laser Irradiation

1986 ◽  
Vol 74 ◽  
Author(s):  
R. Mukai ◽  
N. Sasaki ◽  
M. Nakano
Keyword(s):  
Aspect Ratio ◽  
Integrated Circuits ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Aluminum Film ◽  
Hole Filling ◽  
Aluminum Films ◽  
Via Holes ◽  
Excimer Laser Irradiation ◽  
Via Hole

AbstractVia-hole filling technique by momentarily melting an aluminum film has been developed, whereby planarization of aluminum films for multilevel interconnects on integrated circuits can be achieved. The melting is performed with an optical pulse irradiation from an ArF excimer laser without the problem of junction spiking. This technique is applicable to filling submicron-diameter vias having a diameter of 0.6μm with 0.7μm depth(aspect ratio:∼1.2). Very high aspect ratio(2.0) via-hole filling is achieved by heating the sample. During the laser irradiation, the sample substrate was kept at 300°C.

Parameters Affecting the Process Window for Laser Planarization of Aluminum.

1990 ◽  
Vol 181 ◽  
Author(s):  
Ivo J Raaijmakers ◽  
Harren Chu ◽  
Edith Ong ◽  
Shi-Qing Wang ◽  
Ken Ritz
Keyword(s):  
Aspect Ratio ◽  
Integrated Circuits ◽  
Laser Irradiation ◽  
Metal Surface ◽  
Laser Pulses ◽  
Process Window ◽  
Metal Thickness ◽  
Deposited Metal ◽  
Via Holes ◽  
Task Conditions

ABSTRACTIrradiation with excimer laser pulses is demonstrated as a technique to fill contact/via holes for integrated circuits with Al-(1 wt.%)Cu. We discussed the influence of the size, shape and aspect ratio of the contact hole, and the metal thickness on the process (attitude for laser planarization. The most dominant parameters found to influence the planariza-tion process are the shape of the contact, and the shape of the as-deposited metal surface (“step coverage”). The application of a Cu anti-reflection coating increased the process window substantially. Although a planar Al-Cu surface was easily formed with laser irradiation, void free filling of contact holes was a more demanding task. Conditions for which completely filled contacts can be obtained were discussed.

Surface modification of inorganic solid oxides by excimer laser irradiation

1989 ◽  
Author(s):  
Kaoru Igarashi ◽  
Hideaki Saito ◽  
Tomoo Fujioka ◽  
Satoru Fujitsu ◽  
Kunihito Koumoto ◽  
...  
Keyword(s):  
Surface Modification ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Solid Oxides ◽  
Excimer Laser Irradiation

UV excimer laser drilled high aspect ratio submicron via hole

2009 ◽  
Vol 256 (1) ◽  
pp. 183-186 ◽  
Author(s):  
K.H. Chen ◽  
Wenhsing Wu ◽  
Byung Hwan Chu ◽  
C.Y. Chang ◽  
Jenshan Lin ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Excimer Laser ◽  
High Aspect Ratio ◽  
Via Hole

Wavelength Dependence of Excimer Laser Irradiation Effects on Ethylene-Tetrafluoroethylene Copolymer

1994 ◽  
Vol 33 (Part 1, No. 8) ◽  
pp. 4764-4768 ◽  
Author(s):  
Yuji Hamada ◽  
Shunichi Kawanishi ◽  
Masanobu Nishii ◽  
Shun'ichi Sugimoto ◽  
Tadashi Yamamoto
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Wavelength Dependence ◽  
Irradiation Effects ◽  
Excimer Laser Irradiation ◽  
Ethylene Tetrafluoroethylene

Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation

1996 ◽  
Vol 35 (Part 2, No. 11B) ◽  
pp. L1473-L1475 ◽  
Author(s):  
Kuninori Kitahara ◽  
Katsuyuki Suga ◽  
Akito Hara ◽  
Kazuo Nakajima
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Phase Variation ◽  
Excimer Laser Irradiation ◽  
Amorphous Si

Polycrystalline silicon recrystallized with excimer laser irradiation and impurity doping using ion doping method

1993 ◽  
Vol 73 (7) ◽  
pp. 3271-3275 ◽  
Author(s):  
Yutaka Miyata ◽  
Mamoru Furuta ◽  
Tatsuo Yoshioka ◽  
Tetsuya Kawamura
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Ion Doping ◽  
Impurity Doping ◽  
Excimer Laser Irradiation

Surface Alteration of Amorphous Si3N4 Films by ArF Excimer Laser Irradiation

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1482-L1485 ◽  
Author(s):  
Kazuo Nakamae ◽  
Kou Kurosawa ◽  
Yasuo Takigawa ◽  
Wataru Sasaki ◽  
Yasukazu Izawa ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Surface Alteration ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Amorphous Si3n4

In situ excimer laser irradiation as cleaning tool for solid phase epitaxy of laser crystallized polycrystalline silicon thin films

2013 ◽  
Vol 210 (12) ◽  
pp. 2729-2735 ◽  
Author(s):  
Ingmar Höger ◽  
Thomas Schmidt ◽  
Anja Landgraf ◽  
Martin Schade ◽  
Annett Gawlik ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicon Thin Films ◽  
Excimer Laser Irradiation
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