Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using a HfO2 ceramic target

2011 ◽  
Vol 257 (6) ◽  
pp. 2197-2202 ◽  
Author(s):  
B. Aguirre ◽  
R.S. Vemuri ◽  
D. Zubia ◽  
M.H. Engelhard ◽  
V. Shutthananadan ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Hafnium Oxide ◽  
Ceramic Target ◽  
Sputter Deposited

Studies of MZS and MZOS Structures with Zinc Oxide Deposited by Conventional Rf Diode and Magnetron Sputtering Techniques

1986 ◽  
Vol 77 ◽  
Author(s):  
S. N. Venkatesh ◽  
E. S. Ramakrishnan ◽  
K. C. Jungling ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Comparative Evaluation ◽  
Growth Process ◽  
Zno Films ◽  
Electrical Characteristics ◽  
Ceramic Target ◽  
Sputter Deposited

ABSTRACTHighly crystalline and c-axis oriented zinc oxide thin films were sputter deposited from a ceramic target using rf diode and magnetron sputtering techniques. A comparative evaluation of structure and electrical characteristics of ZnO films in the MZS and MZOS configurations is presented and the results are discussed. The physical and electrical properties were significantly influenced by highly energetic particles originating from the presence of oxygen neutrals in the plasma during the growth process and the behavior differed between the diode and magnetron sputtering processes.

Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

2014 ◽  
Vol 301 ◽  
pp. 28-33 ◽  
Author(s):  
Magdalena Szymańska ◽  
Sylwia Gierałtowska ◽  
Łukasz Wachnicki ◽  
Marcin Grobelny ◽  
Katarzyna Makowska ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Hafnium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Structural And Electrical Properties

The structure of thin films sputter deposited from a Ba2 Si2TiO8 ceramic target

1988 ◽  
Vol 3 (1) ◽  
pp. 105-111 ◽  
Author(s):  
H. Yamauchi ◽  
R. J. White ◽  
M. Ayukawa ◽  
T. C. Murray ◽  
J. W. Robinson
Keyword(s):  
Thin Films ◽  
Crystallization Process ◽  
Amorphous Material ◽  
Appreciable Amount ◽  
X Ray Diffraction ◽  
Fixed Temperature ◽  
Ceramic Target ◽  
Sputter Deposited ◽  
Substrate Temperatures ◽  
Kinetics Of

Thin films were sputter deposited from a Fresnoite (Ba2Si2TiO8) ceramic target at substrate temperatures lower than 175°C. The as-deposited thin films were near amorphous with a void network morphology. In spite of the fact that the film compositions were shifted from stoichiometry, x-ray diffraction studies showed that the films crystallized to form randomly oriented Fresnoite grains. The crystallization kinetics were quite sluggish and the resultant activation energy for the crystallization process was 370 ± 30 kJ/mol. Even after annealing for 10 h at 750°C an appreciable amount of amorphous material remained in the thin films. The short-range order in this amorphous material was changed from that of the as-deposited thin films. The overall devitrification kinetics of amorphous Fresnoite thin films at a fixed temperature were represented theoretically by an equation of Tool's type.

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