Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

2006 ◽  
Vol 252 (19) ◽  
pp. 7262-7264 ◽  
Author(s):  
Z.X. Jiang ◽  
K. Kim ◽  
J. Lerma ◽  
A. Corbett ◽  
D. Sieloff ◽  
...  
Keyword(s):  
Low Energy ◽  
Sims Analysis ◽  
Quantitative Sims

An Effective SIMS Methodology for GOI Contamination Analysis

2013 ◽  
Author(s):  
Yanhua Huang ◽  
Lei Zhu ◽  
Kenny Ong ◽  
Hanwei Teo ◽  
Younan Hua
Keyword(s):  
Oxide Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Gate Oxide ◽  
Sample Surface ◽  
Low Energy ◽  
Cross Contamination ◽  
Common Effect ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Lower Background

Abstract Contamination in the gate oxide layer is the most common effect which cause the gate oxide integrate (GOI) issue. Dynamic Secondary Ion Mass Spectrometry (SIMS) is a mature tool for GOI contamination analysis. During the sample preparation, all metal and IDL layers above poly should be removed because the presence of these layers added complexity for the subsequent SIMS analysis. The normal delayering process is simply carried out by soaking the sample in the HF solution. However, the poly surface is inevitably contaminated by surroundings even though it is already a practice to clean with DI rinse and tape. In this article, TOFSIMS with low energy sputter gun is used to clean the sample surface after the normal delayering process. The residue signals also can be monitored by TOF SIMS during sputtering to confirm the cross contamination is cleared. After that, a much lower background desirable by dynamic SIMS. Thus an accurate depth profile in gate oxide layer can be achieved without the interference from surface.

scholarly journals Quantitative SIMS Analysis of Trace Metallic Impurities in High Purity Copper

1996 ◽  
Vol 60 (3) ◽  
pp. 290-294 ◽  
Author(s):  
Hiroyuki T. Takeshita ◽  
Takuya Kagawa ◽  
Ryosuke O. Suzuki ◽  
Toshio Oishi ◽  
Katsutoshi Ono
Keyword(s):  
High Purity ◽  
Sims Analysis ◽  
Metallic Impurities ◽  
Quantitative Sims ◽  
Purity Copper

Quantitative SIMS analysis of SiC

2003 ◽  
Vol 35 (6) ◽  
pp. 491-495 ◽  
Author(s):  
Yu. Kudriavtsev ◽  
A. Villegas ◽  
A. Godines ◽  
R. Asomoza ◽  
I. Usov
Keyword(s):  
Sims Analysis ◽  
Quantitative Sims

Quantitative SIMS analysis of nitrogen using in situ internal implantation

1999 ◽  
Vol 147 (1-4) ◽  
pp. 14-18 ◽  
Author(s):  
S Seki ◽  
H Tamura ◽  
H Sumiya
Keyword(s):  
Sims Analysis ◽  
Quantitative Sims
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