Dependence of excess bismuth content in precursor sols on ferroelectric and dielectric properties of Bi 3.25 La 0.75 Ti 3 O 12 thin films fabricated by chemical solution deposition

2006 ◽  
Vol 253 (2) ◽  
pp. 417-420 ◽  
Author(s):  
X.L. Zhong ◽  
J.B. Wang ◽  
S.X. Yang ◽  
Y.C. Zhou
2020 ◽  
Vol 8 (15) ◽  
pp. 5102-5111
Author(s):  
Nikolai Helth Gaukås ◽  
Julia Glaum ◽  
Mari-Ann Einarsrud ◽  
Tor Grande

Doped K0.5Na0.5NbO3 films with good ferroelectric and dielectric properties were prepared by aqueous chemical solution deposition on platinized Si substrates.


RSC Advances ◽  
2015 ◽  
Vol 5 (118) ◽  
pp. 97563-97567 ◽  
Author(s):  
Tadasu Hosokura ◽  
Akira Ando ◽  
Takehiro Konoike

We synthesized orientation-controlled (100), (110), and (111) BaTiO3 films by the CSD method and revealed the dielectric properties the films.


2006 ◽  
Vol 179 (12) ◽  
pp. 3739-3743 ◽  
Author(s):  
L.S. Cavalcante ◽  
A.Z. Simões ◽  
L.P.S. Santos ◽  
M.R.M.C. Santos ◽  
E. Longo ◽  
...  

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