Injection of holes at indium tin oxide/dendrimer interface: An explanation with new theory of thermionic emission at metal/organic interfaces

2006 ◽  
Vol 252 (18) ◽  
pp. 6275-6279 ◽  
Author(s):  
Ying-Quan Peng ◽  
Fei-Ping Lu
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thermionic Emission ◽  
Organic Interfaces ◽  
Metal Organic

scholarly journals Indium-tin oxide thin films by metal-organic decomposition

1993 ◽  
Vol 8 (12) ◽  
pp. 3135-3144 ◽  
Author(s):  
Dennis Gallagher ◽  
Francis Scanlan ◽  
Raymond Houriet ◽  
Hans Jörg Mathieu ◽  
Terry A. Ring
Keyword(s):  
Thermal Decomposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Decomposition Reaction ◽  
Scanning Calorimetry ◽  
Glass Substrates ◽  
Reducing Atmosphere ◽  
Temperature Ramp ◽  
Crystalline Films ◽  
Metal Organic

In2O3–SnO2 films were produced by thermal decomposition of a deposit which was dip coated on borosilicate glass substrates from an acetylacetone solution of indium and tin acetoacetonate. Thermal analysis showed complete pyrolysis of the organics by 400 °C. The thermal decomposition reaction generated acetylacetone gas and was found to be first order with an activation energy of 13.6 Kcal/mole. Differences in thermal decomposition between the film and bulk materials were noted. As measured by differential scanning calorimetry using a 40 °C/min temperature ramp, the glass transition temperature of the deposited oxide film was found to be ∼462 °C, and the film crystallization temperature was found to be ∼518 °C. For film fabrication, thermal decomposition of the films was performed at 500 °C in air for 1 h followed by reduction for various times at 500 °C in a reducing atmosphere. Crystalline films resulted for these conditions. A resistivity of ∼1.01 × 10−3 Ω · cm, at 8 wt. % tin oxide with a transparency of ∼95% at 400 nm, has been achieved for a 273 nm thick film.

Ternary Resistive Switching Memory Behavior in Graphene Oxide Layer

NANO ◽  
2018 ◽  
Vol 13 (07) ◽  
pp. 1850072 ◽  
Author(s):  
Junguo Lu ◽  
Yanmei Sun ◽  
Dianzhong Wen
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Applied Voltage ◽  
Thermionic Emission ◽  
Voltage Range ◽  
Resistive Switching Memory ◽  
Resistance State ◽  
Switching Memory

We report the application of graphene oxide (GO) as the active layer of memory devices. The indium-tin-oxide/GO/Al devices present the ternary write-once-read-many times resistive switching memory, and retain the data information for [Formula: see text][Formula: see text]s. In the OFF states, the [Formula: see text]–[Formula: see text] characteristics in the applied voltage dominantly followed the space-charge-limited-current behaviors. The intermediate resistance state was attributed to the thermionic emission mechanism. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism.

scholarly journals Rapid electrochemical synthesis of HKUST-1 on indium tin oxide

RSC Advances ◽  
2017 ◽  
Vol 7 (15) ◽  
pp. 9316-9320 ◽  
Author(s):  
Li-Long Jiang ◽  
Xiangzhou Zeng ◽  
Mengkai Li ◽  
Man-Qing Wang ◽  
Tong-Yu Su ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electrochemical Synthesis ◽  
Metal Organic Framework ◽  
Cu Film ◽  
Metal Organic ◽  
Organic Framework

We synthesized a HKUST-1 metal–organic framework (MOF) on indium tin oxide (ITO) using an electrodeposited Cu film.

Indium—Tin Oxide Organic Interfaces

2003 ◽  
pp. 133-153 ◽  
Author(s):  
C. L. Donley ◽  
D. R. Dunphy ◽  
W. J. Doherty ◽  
R. A. P. Zangmeister ◽  
A. S. Drager ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Organic Interfaces
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