scholarly journals Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

2016 ◽  
Vol 119 (9) ◽  
pp. 094305 ◽  
Author(s):  
Dan Wu ◽  
Xiaohong Tang ◽  
Kai Wang ◽  
Aurelien Olivier ◽  
Xianqiang Li
Nano Letters ◽  
2008 ◽  
Vol 8 (11) ◽  
pp. 3755-3760 ◽  
Author(s):  
Xin-Yu Bao ◽  
Cesare Soci ◽  
Darija Susac ◽  
Jon Bratvold ◽  
David P. R. Aplin ◽  
...  

Nano Letters ◽  
2011 ◽  
Vol 11 (9) ◽  
pp. 3941-3945 ◽  
Author(s):  
Xin Yan ◽  
Xia Zhang ◽  
Xiaomin Ren ◽  
Hui Huang ◽  
Jingwei Guo ◽  
...  

Author(s):  
Aswani Gopakumar Saraswathy Vilasam ◽  
Ponnappa Kechanda Prasanna ◽  
Xiaoming Yuan ◽  
Zahra Azimi ◽  
Felipe Kremer ◽  
...  

1995 ◽  
Vol 415 ◽  
Author(s):  
Sang Woo Lee ◽  
Donihang Liu ◽  
Ping P. Tsai ◽  
Haydn Chen

ABSTRACTTin oxide (SnO2) thin films were deposited on polycrystalline alumina (A12O3) substrates using metal organic chemical vapor deposition (MOCVD) technique at the growth temperature of 600°C. X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were applied for the microstructure characterization of the films. The films were subjected to sensing tests under 1% H2 environment by monitoring changes in the electrical resistance of the films at elevated temperatures. There is a trend to exhibit sensor temperature characteristic in the deposited thin films which show a local maximum in the electrical resistance curve as a function of ambient temperature. The local maximum occurred at a relatively higher temperature than found in bulk sintered ceramics.


2011 ◽  
Vol 32 (5) ◽  
pp. 053003 ◽  
Author(s):  
Ran Li ◽  
Hui Huang ◽  
Xiaomin Ren ◽  
Jingwei Guo ◽  
Xiaolong Liu ◽  
...  

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