Influence of hydrogen and oxygen plasma treatment on field emission characteristics of boron nitride thin films

2005 ◽  
Vol 242 (1-2) ◽  
pp. 207-211 ◽  
Author(s):  
Weiqing Li ◽  
Guangrui Gu ◽  
Yingai Li ◽  
Zhi He ◽  
Lihua Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Plasma Treatment ◽  
Field Emission ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Emission Characteristics

Effect of Oxygen Plasma Treatment on p-Type Electrical Properties of Amorphous La2NiO4+δ Thin Films

2015 ◽  
Vol 10 (4) ◽  
pp. 475-479 ◽  
Author(s):  
Dang-Hoang Hop ◽  
Young-Woo Heo ◽  
Jeong-Joo Kim ◽  
Soo-Young Park ◽  
Inn-Kyu Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Effect Of Oxygen

Formation of tetragonal or monoclinic ZrO2coatings by oxygen plasma treatment of Zr74.7Cu19.7Nb5.6glassy thin films

2011 ◽  
Vol 29 (5) ◽  
pp. 051303 ◽  
Author(s):  
N. T. Panagiotopoulos ◽  
J. Kovač ◽  
M. Mozetič ◽  
P. Patsalas ◽  
G. A. Evangelakis
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

Effects of oxygen-plasma treatment in La0.7Ca0.3MnO3−δ thin films

2004 ◽  
Vol 39 (13) ◽  
pp. 2119-2125
Author(s):  
K.W. Joh ◽  
C.H. Lee ◽  
Cheol Eui Lee ◽  
S.J. Noh ◽  
Y.H. Jeong
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

EFFECTS OF OXYGEN CONTENT ON THE TRANSPORT PROPERTIES OF La0.7Ca0.3MnO3-δ THIN FILMS

2007 ◽  
Vol 14 (05) ◽  
pp. 899-902
Author(s):  
H. C. JIANG ◽  
W. L. ZHANG ◽  
Z. C. CHEN ◽  
W. X. ZHANG ◽  
B. PENG
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Transport Properties ◽  
Oxygen Content ◽  
Oxygen Plasma ◽  
Rf Magnetron Sputtering ◽  
Oxygen Plasma Treatment ◽  
Oriented Growth ◽  
Temperature Range ◽  
Xrd Patterns

We report the effects of oxygen content on the transport properties of La 0.7 Ca 0.3 MnO 3-δ thin films grown epitaxially on LaAlO 3 (001) substrates by RF magnetron sputtering. The as-deposited thin films were annealed and treated by oxygen plasma to improve the oxygen content. We observe that the La 0.7 Ca 0.3 MnO 3-δ films annealed at 850°C is highly oriented growth on (001) LAO substrate. However, the XRD patterns of the samples annealed at lower than 850°C show no distinct diffraction peaks. This evidence indicates that the samples annealed at lower than 850°C are still amorphous or nanocrystalline. The La 0.7 Ca 0.3 MnO 3-δ films without oxygen plasma do not suffer insulator to metal transition at the temperature range from 213 to 293 K. But, at the same temperature range, for the 650°C, 750°C, and 850°C annealed samples with oxygen plasma treatment show an insulator to metal transition at 239 K, 239 K, and 257 K, respectively. Moreover, compared to without oxygen plasma treatment, the resistivity of the sample with oxygen plasma treatment is dramatically decreased. These results imply that the insulator to metal transition is strongly determined by the ratio of Mn 4+/ Mn 3+ and the oxygen content of the films. The increases of the ratio of Mn 4+/ Mn 3+ and the oxygen content lead to a higher insulator to metal transition temperature.

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