Electrical properties tunability of large area MoS2 thin films by oxygen plasma treatment

2020 ◽  
Vol 116 (22) ◽  
pp. 223102 ◽  
Author(s):  
Bhim Chamlagain ◽  
Saiful I. Khondaker
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Large Area

Effect of Oxygen Plasma Treatment on p-Type Electrical Properties of Amorphous La2NiO4+δ Thin Films

2015 ◽  
Vol 10 (4) ◽  
pp. 475-479 ◽  
Author(s):  
Dang-Hoang Hop ◽  
Young-Woo Heo ◽  
Jeong-Joo Kim ◽  
Soo-Young Park ◽  
Inn-Kyu Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Effect Of Oxygen

scholarly journals Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1804 ◽  
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment ◽  
Calcination Process ◽  
Microwave Annealing ◽  
High K

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.

Formation of tetragonal or monoclinic ZrO2coatings by oxygen plasma treatment of Zr74.7Cu19.7Nb5.6glassy thin films

2011 ◽  
Vol 29 (5) ◽  
pp. 051303 ◽  
Author(s):  
N. T. Panagiotopoulos ◽  
J. Kovač ◽  
M. Mozetič ◽  
P. Patsalas ◽  
G. A. Evangelakis
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

Effects of oxygen-plasma treatment in La0.7Ca0.3MnO3−δ thin films

2004 ◽  
Vol 39 (13) ◽  
pp. 2119-2125
Author(s):  
K.W. Joh ◽  
C.H. Lee ◽  
Cheol Eui Lee ◽  
S.J. Noh ◽  
Y.H. Jeong
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

EFFECTS OF OXYGEN CONTENT ON THE TRANSPORT PROPERTIES OF La0.7Ca0.3MnO3-δ THIN FILMS

2007 ◽  
Vol 14 (05) ◽  
pp. 899-902
Author(s):  
H. C. JIANG ◽  
W. L. ZHANG ◽  
Z. C. CHEN ◽  
W. X. ZHANG ◽  
B. PENG
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Transport Properties ◽  
Oxygen Content ◽  
Oxygen Plasma ◽  
Rf Magnetron Sputtering ◽  
Oxygen Plasma Treatment ◽  
Oriented Growth ◽  
Temperature Range ◽  
Xrd Patterns

We report the effects of oxygen content on the transport properties of La 0.7 Ca 0.3 MnO 3-δ thin films grown epitaxially on LaAlO 3 (001) substrates by RF magnetron sputtering. The as-deposited thin films were annealed and treated by oxygen plasma to improve the oxygen content. We observe that the La 0.7 Ca 0.3 MnO 3-δ films annealed at 850°C is highly oriented growth on (001) LAO substrate. However, the XRD patterns of the samples annealed at lower than 850°C show no distinct diffraction peaks. This evidence indicates that the samples annealed at lower than 850°C are still amorphous or nanocrystalline. The La 0.7 Ca 0.3 MnO 3-δ films without oxygen plasma do not suffer insulator to metal transition at the temperature range from 213 to 293 K. But, at the same temperature range, for the 650°C, 750°C, and 850°C annealed samples with oxygen plasma treatment show an insulator to metal transition at 239 K, 239 K, and 257 K, respectively. Moreover, compared to without oxygen plasma treatment, the resistivity of the sample with oxygen plasma treatment is dramatically decreased. These results imply that the insulator to metal transition is strongly determined by the ratio of Mn 4+/ Mn 3+ and the oxygen content of the films. The increases of the ratio of Mn 4+/ Mn 3+ and the oxygen content lead to a higher insulator to metal transition temperature.

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