Characterization of TiN thin films subjected to nanoindentation using focused ion beam milling

2004 ◽  
Vol 237 (1-4) ◽  
pp. 627-631 ◽  
Author(s):  
L.W. Ma ◽  
J.M. Cairney ◽  
M.J. Hoffman ◽  
P.R. Munroe
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tin Thin Films ◽  
Focused Ion Beam Milling

Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging

2012 ◽  
Vol 520 (6) ◽  
pp. 2073-2076 ◽  
Author(s):  
Xu Song ◽  
Kong Boon Yeap ◽  
Jing Zhu ◽  
Jonathan Belnoue ◽  
Marco Sebastiani ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Focused Ion Beam ◽  
Stress Measurement ◽  
Ion Beam ◽  
Residual Stress Measurement ◽  
Focused Ion Beam Milling

scholarly journals Fabrication and characterization of high-TcYBa2Cu3O7−xnanoSQUIDs made by focused ion beam milling

2008 ◽  
Vol 19 (31) ◽  
pp. 315304 ◽  
Author(s):  
C H Wu ◽  
Y T Chou ◽  
W C Kuo ◽  
J H Chen ◽  
L M Wang ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Fabrication And Characterization ◽  
Focused Ion Beam Milling

scholarly journals Applicability of focused Ion beam (FIB) milling with gallium, neon, and xenon to the fracture toughness characterization of gold thin films

2021 ◽  
Author(s):  
Eva I. Preiß ◽  
Benoit Merle ◽  
Yuan Xiao ◽  
Florentina Gannott ◽  
Jan P. Liebig ◽  
...  
Keyword(s):  
Thin Films ◽  
Fracture Toughness ◽  
Crack Initiation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Experimental Designs ◽  
Milling Parameters ◽  
Gold Thin Films ◽  
Ion Species

Abstract Focused ion beam (FIB) milling is an increasingly popular technique for fabricating micro-sized samples for nanomechanical characterization. Previous investigations have cautioned that exposure to a gallium ion beam can significantly alter the mechanical behavior of materials. In the present study, the effects of gallium, neon, and xenon ions are scrutinized. We demonstrate that fracture toughness measurements on freestanding gold thin films are unaffected by the choice of the ion species and milling parameters. This is likely because the crack initiation is controlled by the local microstructure and grain boundaries at the notch, rather than by the damaged area introduced by FIB milling. Additionally, gold is not susceptible to chemical embrittlement by common FIB ion species. This confirms the validity of microscale fracture measurements based on similar experimental designs. Graphical abstract

Chemically Enhanced Focused Ion Beam Selective Patterning of Titanium, Titanium Oxide and Nitride Thin Films

2006 ◽  
Vol 983 ◽  
Author(s):  
Andrei Stanishevsky ◽  
John Melngailis
Keyword(s):  
Thin Films ◽  
Titanium Oxide ◽  
Focused Ion Beam ◽  
Removal Rate ◽  
Ion Beam ◽  
Pure Titanium ◽  
Chemical Enhancement ◽  
Tin Thin Films ◽  
Etching Selectivity ◽  
Film Substrate

AbstractFocused ion beams (FIBs) provide maskless prototyping of 2-D and 3-D micro- and nano-structures for many applications in optics, electronics, and medicine. In many situations, the chemical enhancement of the FIB sputtering process is used to increase the selectivity and removal rate of different materials.In this study, Ti, TiO2, and TiN thin films of different origin were patterned using Ga+ FIB without or with chemical enhancement (or gas assisted etching, GAE). The effects of ion beam parameters and gas ambient on the sputtering yields, etching selectivity, roughening at the film/substrate interface, sub-micron and nano-scale patterning of these materials were investigated.Several gases, including XeF2, CO2, chlorine, bromine, and oxygen, were employed. The largest increase of the sputtering yield was achieved with XeF2 gas, whereas CO2 and oxygen depleted the sputtering rate. Among all gases tested, the Br2 FIB GAE produced the best uniformity of the material removal. It was found that the use of bromine gas provides the best selectivity between the titanium oxide and pure titanium or its nitride.

Gallium, neon and helium focused ion beam milling of thin films demonstrated for polymeric materials: study of implantation artifacts

Nanoscale ◽  
2019 ◽  
Vol 11 (3) ◽  
pp. 1403-1409 ◽  
Author(s):  
Frances I. Allen ◽  
Nathan R. Velez ◽  
Rachel C. Thayer ◽  
Nipam H. Patel ◽  
Mary Ann Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polymeric Materials ◽  
Helium Ion ◽  
Focused Ion Beam Milling

The focused helium ion beam is ideally suited to precision milling of thin films avoiding implantation artifacts.

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