Anisotropy of lateral growth rate in liquid phase epitaxy of InP and its association with kink-step structures on the surface

2004 ◽  
Vol 237 (1-4) ◽  
pp. 235-241
Author(s):  
Toshio Kochiya ◽  
Yutaka Oyama ◽  
Ken Suto ◽  
Jun-ichi Nishizawa
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Lateral Growth ◽  
Lateral Growth Rate

Anisotropy of lateral growth rate in liquid phase epitaxy of {0 0 1} InP

2003 ◽  
Vol 216 (1-4) ◽  
pp. 78-82 ◽  
Author(s):  
Toshio Kochiya ◽  
Yutaka Oyama ◽  
Ken Suto ◽  
Jun-Ichi Nishizawa
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Lateral Growth ◽  
Lateral Growth Rate

Angular dependence of lateral growth rate on the InP (111)A,B surface by liquid-phase epitaxy

2003 ◽  
Vol 258 (1-2) ◽  
pp. 41-48
Author(s):  
Yutaka Oyama ◽  
Toshio Kochiya ◽  
Ken Suto ◽  
Jun-Ichi Nishizawa
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Angular Dependence ◽  
Liquid Phase Epitaxy ◽  
Lateral Growth ◽  
Lateral Growth Rate

Determination of angular dependence of lateral growth rate in liquid phase epitaxy of (001) InP

2002 ◽  
Vol 243 (2) ◽  
pp. 267-274 ◽  
Author(s):  
Yutaka Oyama ◽  
Toshio Kochiya ◽  
Ken Suto ◽  
Jun-ichi Nishizawa
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Angular Dependence ◽  
Liquid Phase Epitaxy ◽  
Lateral Growth ◽  
Lateral Growth Rate

Selective Growth of GaAs on GaAs-Coated Si Substrate by Liquid Phase Electro-Epitaxy

1991 ◽  
Vol 237 ◽  
Author(s):  
Shiro Sakai ◽  
Yasuno Ohashi
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Gaas Layer ◽  
Lateral Growth ◽  
Etch Pit Density ◽  
Si Substrate ◽  
Etch Pit ◽  
Lateral Overgrowth ◽  
Lateral Growth Rate ◽  
Lateral Current

ABSTRACTThe selective LPEE (liquid phase electro-epitaxy) growth of GaAs on GaAs-coated Si substrate prepared by MOCVD has been performed. Several attempts, the use of the insulator melt cap, lowering of the melt height and optimization of the stripe direction, have been tried to increase the lateral growth rate. Very wide (60 μm) lateral overgrowth on the SiO2 mask is obtained by making the stripe window in <010> and equivalent directions and by increasing the lateral current component in the LPEE. The GaAs layer laterally grown on the SiO2 has much less EPD (etch pit density) showing that the defect in the MOCVD-GaAs is blocked by the SiO2. The growth mechanism and the method of increasing the lateral growth rate are discussed.

Power law of molecular weight dependence of lateral growth rate of isotactic polypropylene

Polymer ◽  
2006 ◽  
Vol 47 (21) ◽  
pp. 7601-7606 ◽  
Author(s):  
Koji Yamada ◽  
Kaori Watanabe ◽  
Kiyoka Okada ◽  
Akihiko Toda ◽  
Masamichi Hikosaka
Keyword(s):  
Molecular Weight ◽  
Growth Rate ◽  
Power Law ◽  
Isotactic Polypropylene ◽  
Lateral Growth ◽  
Molecular Weight Dependence ◽  
Lateral Growth Rate

Effects of the lateral growth rate on wood quality parameters of Eucalyptus grandis from different latitudes in Brazil and Argentina

2009 ◽  
Vol 257 (10) ◽  
pp. 2175-2181 ◽  
Author(s):  
Miho Kojima ◽  
Fabio Minoru Yamaji ◽  
Hiroyuki Yamamoto ◽  
Masato Yoshida ◽  
Takahisa Nakai
Keyword(s):  
Growth Rate ◽  
Wood Quality ◽  
Eucalyptus Grandis ◽  
Quality Parameters ◽  
Lateral Growth ◽  
Lateral Growth Rate

Al diffusivity as a function of growth rate during the formation of (GaAl)As heterojunctions by liquid phase epitaxy

1981 ◽  
Vol 52 (2) ◽  
pp. 814-817 ◽  
Author(s):  
M. B. Small ◽  
R. Ghez ◽  
W. Reuter ◽  
R. M. Potemski
Keyword(s):  
Growth Rate ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy

scholarly journals Growth and Characterization of Gan Bulk Crystals Via Vapor Phase Transport

2000 ◽  
Vol 639 ◽  
Author(s):  
H. Shin ◽  
D. B. Thomson ◽  
P. Q. Miraglia ◽  
S. D. Wolter ◽  
R. Schlesser ◽  
...  
Keyword(s):  
Growth Rate ◽  
Vapor Phase ◽  
Ammonia Nitrogen ◽  
Direct Reaction ◽  
Lateral Growth ◽  
Seeded Growth ◽  
Free Standing ◽  
Vapor Phase Transport ◽  
Lateral Growth Rate ◽  
Phase Transport

ABSTRACTFree-standing single crystals of bulk GaN were grown via unseeded vapor phase transport at 1130°C on hexagonal BN surfaces via direct reaction of Ga with ammonia. The number of nucleation events was reduced and the crystal size increased by introducing the ammonia at high temperatures. The resulting crystals were either needles or platelets depending on the process variables employed. Low V/III ratios achieved via ammonia flow rates ≤ 75sccm and/or ammonia total pressures ≤ 430Torr favored lateral growth. The average lateral growth rate for the platelets was ∼50μm/hr; the average vertical growth rate for the needles was ∼500μm/hr. Growth rates in all other directions for each of these two morphologies were very low. Seeded growth of both needle and platelet crystals was also achieved; however, the growth rate decreased at longer times and higher pressures due to reaction with H2 from the increased decomposition of ammonia. Nitrogen dilution suppressed this decomposition. A 2mm × 1.5mm GaN crystal was grown with minimal decomposition in a 66.7%NH3 and 33.3%N2 gas mixture.

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