Towards atomic level vanadium doping of TiO2 via liquid-phase atomic layer deposition

2011 ◽  
Vol 409-410 ◽  
pp. 87-90 ◽  
Author(s):  
Yaodong Shen ◽  
Thelese R.B. Foong ◽  
Xiao Hu
Materials ◽  
2013 ◽  
Vol 6 (5) ◽  
pp. 1718-1729 ◽  
Author(s):  
Hyeonhee Choi ◽  
Jung-Hyun Bae ◽  
Do Kim ◽  
Young-Kwon Park ◽  
Jong-Ki Jeon

2014 ◽  
Vol 2 (36) ◽  
pp. 7570-7574 ◽  
Author(s):  
Yijun Zhang ◽  
Wei Ren ◽  
Zhuangde Jiang ◽  
Shuming Yang ◽  
Weixuan Jing ◽  
...  

Atomic-resolution image of a graphene sheet synthesized by remote plasma-enhanced atomic layer deposition at low temperatures.


2007 ◽  
Vol 990 ◽  
Author(s):  
Sung-Hoon Chung ◽  
Vladislav Vasilyev ◽  
Evgeni Gorokhov ◽  
Yong-Won Song ◽  
Hyuk-Kyoo Jang

ABSTRACTWe investigated effects of thermal annealing on Ru films deposited on the 8 inch Si substrates using a volatile liquid-phase Ru precursor, tricarbonyl-1,3-cyclohexadienyl ruthenium (Ru(CO)3(C6H8)) by an atomic layer deposition (ALD) technique. Structural and electrical properties of the films were characterized by scanning probe microscopy, X-ray diffractometry, sheet resistance. Grazing incidence X-ray diffraction (GIXRD) patterns show typical Ru hexagonal polycrystalline peaks as annealing temperature was increased. At the highest annealing temperature condition, Ta = 700 °C electrical resistivity become 6 times less than in as-deposited films.


2013 ◽  
Vol 125 (51) ◽  
pp. 14068-14068 ◽  
Author(s):  
Brandon J. O'Neill ◽  
David H. K. Jackson ◽  
Anthony J. Crisci ◽  
Carrie A. Farberow ◽  
Fengyuan Shi ◽  
...  

2013 ◽  
Vol 52 (51) ◽  
pp. 13824-13824
Author(s):  
Brandon J. O'Neill ◽  
David H. K. Jackson ◽  
Anthony J. Crisci ◽  
Carrie A. Farberow ◽  
Fengyuan Shi ◽  
...  

2013 ◽  
Vol 125 (51) ◽  
pp. 14053-14057 ◽  
Author(s):  
Brandon J. O'Neill ◽  
David H. K. Jackson ◽  
Anthony J. Crisci ◽  
Carrie A. Farberow ◽  
Fengyuan Shi ◽  
...  

2015 ◽  
Vol 3 (32) ◽  
pp. 8364-8371 ◽  
Author(s):  
T. S. Tripathi ◽  
Janne-Petteri Niemelä ◽  
Maarit Karppinen

Atomic layer deposition (ALD) is a vital gas-phase technique for atomic-level thickness-controlled deposition of high-quality thin films of CuCrO2 on various substrate morphologies owing to its self-limiting gas-surface reaction mechanism.


2013 ◽  
Vol 52 (51) ◽  
pp. 13808-13812 ◽  
Author(s):  
Brandon J. O'Neill ◽  
David H. K. Jackson ◽  
Anthony J. Crisci ◽  
Carrie A. Farberow ◽  
Fengyuan Shi ◽  
...  

2019 ◽  
Vol 31 (52) ◽  
pp. 1970373 ◽  
Author(s):  
Benjamin P. Le Monnier ◽  
Frederick Wells ◽  
Farzaneh Talebkeikhah ◽  
Jeremy S. Luterbacher

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