Stress anisotropy in circular planar magnetron sputter deposited molybdenum films and its annealing effect

2003 ◽  
Vol 76 (2) ◽  
pp. 147-152 ◽  
Author(s):  
Y.G. Wu ◽  
E.H. Cao ◽  
Z.S. Wang ◽  
J.M. Wei ◽  
W.X. Tang ◽  
...  
2002 ◽  
Vol 19 (7) ◽  
pp. 964-966 ◽  
Author(s):  
Wu Yong-Gang ◽  
Gu Chun-Shi ◽  
Cao Er-Hua ◽  
Wang Zhan-Shan ◽  
Wei Jun-Ming ◽  
...  

1988 ◽  
Vol 119 ◽  
Author(s):  
D. M. Mattox ◽  
R. E. Cuthrell

AbstractAtomistically deposited films may form with high residual stresses which may be either tensile or compressive in nature. These film stresses represent stored strain energy which may affect the adhesion of the film-substrate couple and in the limit may cause spontaneous fracture at or near the film-substrate interface (loss of adhesion). In the post cathode magnetron sputter deposition of molybdenum films, we have found that the intrinsic film stresses are generally anisotropic and may easily exceed the fracture or adhesive strength of the film-substrate couple. The residual stress anisotropy in the film is dependent on the orientation with respect to the post cathode and the magnitude and nature of the stresses are very dependent on the deposition conditions, particularly gas pressure during sputtering. By using a pressure-cycling technique, we have deposited thick (5 microns) films of molybdenum which have little residual stress or stress anisotropy.


1989 ◽  
Vol 67 (4) ◽  
pp. 347-350 ◽  
Author(s):  
M. J. Brett ◽  
K. L. Westra ◽  
T. Smy

Ballistic deposition of hard discs has been used for computer simulation of thin film growth over a step on a substrate surface. Up to 16 000 particles were deposited per simulation using an angular distribution of particle trajectories representative of planar magnetron sputter deposition and incorporating a surface mobility model for deposited particles. The simulated films show a surface profile evolution during growth and an orientation of columnar film microstructure that are very close to the surface profile and microstructure observed in real films of aluminum sputter deposited over an oxide step on a silicon substrate.


2002 ◽  
Vol 92 (1) ◽  
pp. 310-319 ◽  
Author(s):  
David L. Young ◽  
Helio Moutinho ◽  
Yanfa Yan ◽  
Timothy J. Coutts

2014 ◽  
Vol 255 ◽  
pp. 37-42 ◽  
Author(s):  
J. Kulczyk-Malecka ◽  
P.J. Kelly ◽  
G. West ◽  
Clarke G.C.B. ◽  
J.A. Ridealgh

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