Simulation of thin film step coverage and microstructure

1989 ◽  
Vol 67 (4) ◽  
pp. 347-350 ◽  
Author(s):  
M. J. Brett ◽  
K. L. Westra ◽  
T. Smy
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Substrate Surface ◽  
Surface Profile ◽  
Mobility Model ◽  
Surface Mobility ◽  
Planar Magnetron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Sputter Deposited

Ballistic deposition of hard discs has been used for computer simulation of thin film growth over a step on a substrate surface. Up to 16 000 particles were deposited per simulation using an angular distribution of particle trajectories representative of planar magnetron sputter deposition and incorporating a surface mobility model for deposited particles. The simulated films show a surface profile evolution during growth and an orientation of columnar film microstructure that are very close to the surface profile and microstructure observed in real films of aluminum sputter deposited over an oxide step on a silicon substrate.

Residual Stress, Fracture, and Adhesion in Sputter-Deposited Molybdenum Films

1988 ◽  
Vol 119 ◽  
Author(s):  
D. M. Mattox ◽  
R. E. Cuthrell
Keyword(s):  
Residual Stress ◽  
Strain Energy ◽  
Pressure Cycling ◽  
Stress Anisotropy ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Sputter Deposited ◽  
Film Substrate ◽  
Deposited Films ◽  
Deposition Conditions

AbstractAtomistically deposited films may form with high residual stresses which may be either tensile or compressive in nature. These film stresses represent stored strain energy which may affect the adhesion of the film-substrate couple and in the limit may cause spontaneous fracture at or near the film-substrate interface (loss of adhesion). In the post cathode magnetron sputter deposition of molybdenum films, we have found that the intrinsic film stresses are generally anisotropic and may easily exceed the fracture or adhesive strength of the film-substrate couple. The residual stress anisotropy in the film is dependent on the orientation with respect to the post cathode and the magnitude and nature of the stresses are very dependent on the deposition conditions, particularly gas pressure during sputtering. By using a pressure-cycling technique, we have deposited thick (5 microns) films of molybdenum which have little residual stress or stress anisotropy.

Influence of microstructure of substrate surface on early stage of thin film growth

Vacuum ◽  
2000 ◽  
Vol 56 (3) ◽  
pp. 185-190 ◽  
Author(s):  
Helin Wei ◽  
Zuli Liu ◽  
Kailun Yao
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Early Stage ◽  
Substrate Surface ◽  
Thin Film Growth

EFFECT OF SURFACTANT AND SUBSTRATE TEMPERATURE ON THE GROWTH OF Ag FILMS ON A SAPPHIRE SURFACE

1997 ◽  
Vol 04 (02) ◽  
pp. 219-222 ◽  
Author(s):  
T. LEWOWSKI ◽  
P. WIECZOREK
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Sapphire Substrate ◽  
Metal Film ◽  
Film Growth ◽  
Substrate Surface ◽  
Thin Metal Film ◽  
Thin Film Growth ◽  
Sapphire Surface ◽  
Electrically Conducting

The possibility of modification of the thin film growth on an insulating (sapphire) substrate by using a Ga monolayer as a "surfactant" was studied. We found that the films grown in this way are electrically conducting and can emit photoelectrons at much lower thickness than those deposited on a pure substrate. The surfactant stabilizes the positions of Ag atoms on the substrate surface and inhibits the coalescence of small nuclei into bigger islands, even when the film is annealed to 450 K. This fact may be very important for thin metal film technology.

Novel understanding of the YBa2Cu3O7–x thin film growth

2002 ◽  
Vol 17 (2) ◽  
pp. 302-305 ◽  
Author(s):  
D. X. Huang ◽  
Y. Nakamura ◽  
Y. Yamada ◽  
I. Hirabayshi
Keyword(s):  
Thin Film ◽  
Growth Process ◽  
Film Growth ◽  
Substrate Surface ◽  
Thin Film Growth ◽  
Competitive Growth ◽  
Ybco Thin Film ◽  
Local Surface ◽  
Cross Sectional ◽  
Oriented Film

By combining the cross-sectional observation of the randomly oriented film areas and the analyses of the film microstructural influence by the substrate-surface morphology, we achieved a novel understanding of the YBa2Cu3O7–x (YBCO) thin film growth process, which leads to an explanation of different microstructures formed in YBCO thin films. Selective and competitive growth of YBa2Cu3O7–x and Ba–Cu–O/Cu–O was found to occur in the whole film growth process depending on the local surface roughness in which the interfacial energy played a controlling role.

Anodic oxide film growth on thin magnetron sputter-deposited titanium layer

2014 ◽  
Vol 98 ◽  
pp. 102-106 ◽  
Author(s):  
Z. Liu ◽  
H. Liu ◽  
T. Hashimoto ◽  
G.E. Thompson ◽  
P. Skeldon
Keyword(s):  
Oxide Film ◽  
Film Growth ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Titanium Layer ◽  
Magnetron Sputter ◽  
Sputter Deposited
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