Abnormal piezoresponse behavior of Pb(Mg1/3Nb2/3)O3-30%PbTiO3 single crystal studied by high vacuum scanning force microscopy

2003 ◽  
Vol 48 (13) ◽  
pp. 1386-1389
Author(s):  
Huarong Zeng ◽  
Qingrui Yin ◽  
Guorong Li ◽  
Haosu Luo ◽  
Zhenkui Xu
Keyword(s):  
Single Crystal ◽  
High Vacuum ◽  
Scanning Force Microscopy ◽  
Force Microscopy ◽  
Scanning Force

Atomic layer wear of single‐crystal calcite in aqueous solution using scanning force microscopy

1996 ◽  
Vol 80 (5) ◽  
pp. 2680-2686 ◽  
Author(s):  
Nam‐Seok Park ◽  
Myoung‐Won Kim ◽  
S. C. Langford ◽  
J. T. Dickinson
Keyword(s):  
Aqueous Solution ◽  
Single Crystal ◽  
Atomic Layer ◽  
Scanning Force Microscopy ◽  
Force Microscopy ◽  
Scanning Force

scholarly journals Miniaturized single-crystal silicon cantilevers for scanning force microscopy

2005 ◽  
Vol 86 (13) ◽  
pp. 134101 ◽  
Author(s):  
J. L. Yang ◽  
M. Despont ◽  
U. Drechsler ◽  
B. W. Hoogenboom ◽  
P. L. T. M. Frederix ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Scanning Force Microscopy ◽  
Crystal Silicon ◽  
Force Microscopy ◽  
Scanning Force

Ferroelectric Domain Imaging Mechanism in High-Vacuum Scanning Force Microscopy

2004 ◽  
Vol 22 (1) ◽  
pp. 43-45 ◽  
Author(s):  
Zeng Hua-Rong ◽  
Yu Han-Feng ◽  
Chu Rui-Qing ◽  
Li Guo-Rong ◽  
Yin Qing-Rui
Keyword(s):  
High Vacuum ◽  
Scanning Force Microscopy ◽  
Ferroelectric Domain ◽  
Force Microscopy ◽  
Scanning Force

Control of epitaxial growth orientation in YBa2Cu3O7−δ films on vicinal (110) SrTiO3 substrates

1998 ◽  
Vol 13 (10) ◽  
pp. 2791-2799 ◽  
Author(s):  
D. S. Linehan ◽  
E. P. Kvam ◽  
L. Hou ◽  
M. W. McElfresh
Keyword(s):  
Single Crystal ◽  
Film Surface ◽  
Scanning Force Microscopy ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Force Microscopy ◽  
Axis Parallel ◽  
Scanning Force ◽  
Ybco Single Crystal

Films of Yba2Cu3O7−δ (YBCO) were grown on (001), exact and vicinal (110), and (111) SrTiO3 single crystal substrates by pulsed laser deposition, and evaluated by x-ray diffraction and scanning force microscopy (AFM). It was observed that the YBCO was always epitaxially aligned to the substrate with the [001] (c-axis) parallel to a substrate cube axis direction. For the exact (001), (110), and (111) surfaces, there were one, two, and three orientations, respectively. For the vicinal (110) surfaces, however, there was usually only one discernible c-axis orientation, corresponding to a single {013} film surface orientation. The reduction of the (110) surface twofold symmetry by use of a vicinal substrate thus allowed controlled growth of a YBCO single crystal with an inclined c-axis orientation.

Scanned tip measurement of deep vertical facets on a flat surface: Measuring roughness on gaas laser waveguide mirrors

1993 ◽  
Vol 51 ◽  
pp. 532-533
Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick
Keyword(s):  
Integrated Circuits ◽  
Flat Surface ◽  
Scanning Force Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Optoelectronic Integrated Circuits ◽  
Laser Waveguide ◽  
Scanning Force ◽  
Gaas Laser

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.

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