A reliable fabrication technique for very low resistance ohmic contacts top-InGaAs using low energy Ar+ ion beam sputtering

1991 ◽  
Vol 20 (12) ◽  
pp. 1059-1063 ◽  
Author(s):  
G. Stareev ◽  
A. Umbach
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Low Energy ◽  
Fabrication Technique ◽  
Ion Beam Sputtering ◽  
Low Resistance ◽  
Beam Sputtering

Topographical changes induced by low energy ion beam sputtering at oblique incidence

1983 ◽  
Vol 77 (3-4) ◽  
pp. 177-193 ◽  
Author(s):  
Ren Cong-xin ◽  
Chen Guo-Ming ◽  
Fu Xtn-Ding ◽  
Yang Jie ◽  
Fang Hong-Li ◽  
...  
Keyword(s):  
Oblique Incidence ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Influence of Ar+ Energy of Bombardment Cu Target and Low Energy Assisted Bombardment on Cu-W Thin Film Structure by Ion Beam Sputtering

2011 ◽  
Vol 474-476 ◽  
pp. 448-453
Author(s):  
Yong Ping Ai ◽  
Ying Ying Zeng ◽  
Li Jun Liu ◽  
Xiao Ming Huang ◽  
Tai Ping Zhou
Keyword(s):  
Thin Film ◽  
Lattice Distortion ◽  
Ion Beam ◽  
Film Structure ◽  
Ion Source ◽  
Crystal Defects ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Copper Target ◽  
Beam Sputtering

This paper is to study the influence of Ar+ energy of bombardment Cu target and low energy assisted bombardment on Cu-W film structure in the preparation of Cu-W thin film by dual ion beam sputtering technique with iron as the substrate and argon as ion source. The results shown : when Ar+ energy of bombardment tungsten target is about 3keV, the beam of copper target is 20mA, Ar+ energy of bombardment Cu target is 1kev, 1.5kev and 2keV respectively, Cu-W thin film prepared by ion beam sputtering exists with the skeleton of tungsten in amorphous phase mixing with copper grains; with the increase of Ar+ energy of of bombardment copper target, the grain size of copper increases slightly; influenced by crystal defects and lattice distortion, copper diffraction peak offsets a little. Low energy assisted bombardment helps to increase grain growth of copper and can decrease crystal defects and lattice distortion. But with excessive energy, thin film fails to deposit.

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