scholarly journals Ellipsometric studies of microscopic surface roughness of CdS thin films

1994 ◽  
Vol 17 (4) ◽  
pp. 421-427
Author(s):  
Sunny Mathew ◽  
K. P. Vijayakumar
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Cds Thin Films ◽  
Microscopic Surface

Effects of the Surface Roughness on Optical Properties of CdS Thin Films

2010 ◽  
Vol 532 (1) ◽  
pp. 21/[437]-28/[444] ◽  
Author(s):  
Maeng Jun Kim ◽  
Hong Tak Kim ◽  
Jin Kyu Kang ◽  
Dae Hwan Kim ◽  
Dong Ha Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Cds Thin Films

Reduced Surface Roughness of P3HT: PCBM Thin Films with Different Ratios by Electrospray Deposition Methods

2013 ◽  
Vol E96.C (3) ◽  
pp. 362-364
Author(s):  
Takeshi FUKUDA ◽  
Kenji TAKAGI ◽  
Norihiko KAMATA ◽  
Jungmyoung JU ◽  
Yutaka YAMAGATA
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Electrospray Deposition ◽  
Reduced Surface

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

Preparation of CdS Thin Films by Reactive Sputtering Method

Shinku ◽  
1974 ◽  
Vol 17 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Hiroharu HIRABAYASHI ◽  
Minoru NOGAMI
Keyword(s):  
Thin Films ◽  
Reactive Sputtering ◽  
Cds Thin Films

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

scholarly journals Modeling the Layer-by-Layer Growth of HKUST-1 Metal-Organic Framework Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1631
Author(s):  
Qiang Zhang ◽  
Yohanes Pramudya ◽  
Wolfgang Wenzel ◽  
Christof Wöll
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Layer Growth ◽  
Coarse Grained ◽  
Structural Defects ◽  
Effect Of Temperature ◽  
Layer By Layer ◽  
Reactant Concentration ◽  
Metal Organic

Metal organic frameworks have emerged as an important new class of materials with many applications, such as sensing, gas separation, drug delivery. In many cases, their performance is limited by structural defects, including vacancies and domain boundaries. In the case of MOF thin films, surface roughness can also have a pronounced influence on MOF-based device properties. Presently, there is little systematic knowledge about optimal growth conditions with regard to optimal morphologies for specific applications. In this work, we simulate the layer-by-layer (LbL) growth of the HKUST-1 MOF as a function of temperature and reactant concentration using a coarse-grained model that permits detailed insights into the growth mechanism. This model helps to understand the morphological features of HKUST-1 grown under different conditions and can be used to predict and optimize the temperature for the purpose of controlling the crystal quality and yield. It was found that reactant concentration affects the mass deposition rate, while its effect on the crystallinity of the generated HKUST-1 film is less pronounced. In addition, the effect of temperature on the surface roughness of the film can be divided into three regimes. Temperatures in the range from 10 to 129 °C allow better control of surface roughness and film thickness, while film growth in the range of 129 to 182 °C is characterized by a lower mass deposition rate per cycle and rougher surfaces. Finally, for T larger than 182 °C, the film grows slower, but in a smooth fashion. Furthermore, the potential effect of temperature on the crystallinity of LbL-grown HKUST-1 was quantified. To obtain high crystallinity, the operating temperature should preferably not exceed 57 °C, with an optimum around 28 °C, which agrees with experimental observations.

scholarly journals Colloidal CuInSe 2 nanocrystals thin films of low surface roughness

2013 ◽  
Vol 4 (1) ◽  
pp. 015004 ◽  
Author(s):  
Antoine de Kergommeaux ◽  
Angela Fiore ◽  
Jérôme Faure-Vincent ◽  
Adam Pron ◽  
Peter Reiss
Keyword(s):  
Thin Films ◽  
Surface Roughness
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