Electrical characterization of very-low energy (0-30 eV) CI-Radical/Ion-beam-etching induced damage using two-dimensional electron gas heterostructures

1992 ◽  
Vol 21 (1) ◽  
pp. 3-7 ◽  
Author(s):  
Yuichi Ide ◽  
Shigeru Kohmoto ◽  
Kiyoshi Asakawa
Keyword(s):  
Ion Beam ◽  
Electron Gas ◽  
Electrical Characterization ◽  
Low Energy ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Ion Beam Etching ◽  
Dimensional Electron Gas

An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates

2004 ◽  
Vol 95 (12) ◽  
pp. 7982-7989 ◽  
Author(s):  
S. Elhamri ◽  
R. Berney ◽  
W. C. Mitchel ◽  
W. D. Mitchell ◽  
J. C. Roberts ◽  
...  
Keyword(s):  
Electron Gas ◽  
Electrical Characterization ◽  
Silicon Substrates ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/GaAs Heterostructure

1991 ◽  
Vol 30 (Part 1, No. 11B) ◽  
pp. 3261-3265 ◽  
Author(s):  
Masahiro Yamazawa ◽  
Toshiharu Matsumoto ◽  
Hiroaki Taniguchi ◽  
Toshitugu Sakamoto ◽  
Yukihiko Takagaki ◽  
...  
Keyword(s):  
Ion Beam ◽  
Electron Gas ◽  
Low Energy ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Beam Irradiation ◽  
Irradiation Effects ◽  
Ion Beam Irradiation ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations

2021 ◽  
Vol 66 (12) ◽  
pp. 1058
Author(s):  
V.V. Kaliuzhnyi ◽  
O.I. Liubchenko ◽  
M.D. Tymochko ◽  
Y.M. Olikh ◽  
V.P. Kladko ◽  
...  
Keyword(s):  
Carrier Density ◽  
Electron Gas ◽  
Two Dimensional ◽  
Ultrasonic Vibrations ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dx Centers ◽  
Dimensional Electron Gas

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.

MICROWAVE-MODULATED PHOTOLUMINESCENCE OF A TWO-DIMENSIONAL ELECTRON GAS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1541-1548
Author(s):  
B. M. ASHKINADZE ◽  
E. LINDER ◽  
E. COHEN ◽  
L. N. PFEIFFER
Keyword(s):  
Electron Gas ◽  
Spectral Shift ◽  
Low Energy ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
2Deg Density ◽  
Mw Irradiation ◽  
Optically Detected ◽  
Dimensional Electron Gas

The primary effect of microwave (mw) irradiation on a two dimensional electron gas (2DEG) is heating due to mw absorption by the electrons. At low lattice temperatures, pronounced secondary effects are observed: mw-induced modification of the photoluminescence (PL) spectrum and mw-induced resistance oscillations (MIRO). We present an experimental study of mw-modulated PL (MPL) spectroscopy in modulation-doped GaAs/AlGaAs QW's At low magnetic field strengths (B < 0.5 T ), the analysis of the MPL spectra indicates that they arise of a redistribution of the photoexcited holes within the energy states of the top valence band. This is caused by absorbing low-energy acoustic phonons that are emitted by the mw-heated 2DEG. We propose that these nonequilibrium phonons also affect the 2DEG mobility leading to the MIRO's. For B > 0.5 T and intense mw-irradiation, new optically detected resonances (ODRs) are observed at magnetic fields that depend on the 2DEG density and approximately correspond to integer electron filling factors. We argue that these resonances result from a slight 2DEG density increase under mw irradiation with a concurent, low-energy PL spectral shift due to a small bandgap narrowing.

Ion Damage Studies in GaAs-Algaas Ultra-Narrow Wires

1988 ◽  
Vol 144 ◽  
Author(s):  
T. L. Cheeks ◽  
M. L. Roukes ◽  
A. Scherer ◽  
B. P. Van Der Gaag ◽  
H. G. Craighead
Keyword(s):  
Carrier Density ◽  
Electron Gas ◽  
Low Energy ◽  
Charge Carrier Density ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electrical Measurements ◽  
Two Dimensional Electron Gas ◽  
Ion Damage ◽  
Dimensional Electron Gas

ABSTRACTLow energy ion damage effects have been investigated in GaAs-A1GaAs two dimensional electron gas (2DEG) materials. The effect of ion mass (He, Ar, Xe) and adsorbed C12 on the charge carrier density and mobility has been studied for ion bombarded 2DEG systems. The 2DEG mobility was significantly reduced by ion damage with the effect becoming more dramatic with smaller ion mass. For the same treatment, the two dimensional carrier density was relatively unaffected. The results of He ion exposure showed serious degradation of the 2DEG with moderate ion dose. Electrical measurements were performed to determine the conducting widths of narrow patterned wires. For the same structural widths (mask width) He defined wires showed smaller electrical widths than Ar milling in the presence of chlorine. Serious limitations to patterning small structures may be imposed using beam processes that include He or other light mass species.

Sign in / Sign up

Export Citation Format

Share Document